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Title: Formation of dynamic topographic patterns during electron beam induced etching of diamond

Authors:
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1378519
Report Number(s):
LLNL-PROC-727261
Journal ID: ISSN 1431--9276
DOE Contract Number:
AC52-07NA27344
Resource Type:
Conference
Resource Relation:
Journal Volume: 23; Journal Issue: S1; Conference: Presented at: Microscopy & Microanalysis 2017 Meeting, St. Louis, MO, United States, Aug 06 - Aug 13, 2017
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 77 NANOSCIENCE AND NANOTECHNOLOGY

Citation Formats

Martin, A A. Formation of dynamic topographic patterns during electron beam induced etching of diamond. United States: N. p., 2017. Web. doi:10.1017/S1431927617011989.
Martin, A A. Formation of dynamic topographic patterns during electron beam induced etching of diamond. United States. doi:10.1017/S1431927617011989.
Martin, A A. Wed . "Formation of dynamic topographic patterns during electron beam induced etching of diamond". United States. doi:10.1017/S1431927617011989. https://www.osti.gov/servlets/purl/1378519.
@article{osti_1378519,
title = {Formation of dynamic topographic patterns during electron beam induced etching of diamond},
author = {Martin, A A},
abstractNote = {},
doi = {10.1017/S1431927617011989},
journal = {},
number = S1,
volume = 23,
place = {United States},
year = {Wed Mar 15 00:00:00 EDT 2017},
month = {Wed Mar 15 00:00:00 EDT 2017}
}

Conference:
Other availability
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  • Here, we report highly ordered topographic patterns that form on the surface of diamond, span multiple length scales, and have a symmetry controlled by the precursor gas species used in electron-beam-induced etching (EBIE). The pattern formation dynamics reveals an etch rate anisotropy and an electron energy transfer pathway that is overlooked by existing EBIE models. Therefore, we, modify established theory such that it explains our results and remains universally applicable to EBIE. Furthermore, the patterns can be exploited in controlled wetting, optical structuring, and other emerging applications that require nano- and microscale surface texturing of a wide band-gap material.
  • The fabrication of sub-micron pores in single crystal diamond membranes, which span the entirety of the membrane, is described for the first time, and the translocation properties of polymeric particles through the pore investigated. The pores are produced using a combination of laser micromachining to form the membrane and electron beam induced etching to form the pore. Single crystal diamond as the membrane material, has the advantages of chemical stability and durability, does not hydrate and swell, has outstanding electrical properties that facilitate fast, low noise current-time measurements and is optically transparent for combined optical-conductance sensing. The resulting pores aremore » characterized individually using both conductance measurements, employing a microcapillary electrochemical setup, and electron microscopy. Proof-of-concept experiments to sense charged polystyrene particles as they are electrophoretically driven through a single diamond pore are performed, and the impact of this new pore material on particle translocation is explored. As a result, these findings reveal the potential of diamond as a platform for pore-based sensing technologies and pave the way for the fabrication of single nanopores which span the entirety of a diamond membrane.« less
  • The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behaviormore » of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system.« less
  • We are developing a high voltage, high average power, electron-beam controlled diamond switch that could significantly impact high power solid-state electronics in industrial and defense applications. An electron-beam controlled thin-film diamond could switch well over 100 kW average power at MHz frequencies, greater than 5 kV, and with high efficiency. This performance is due to the excellent thermal and electronic properties of diamond, the high efficiency achieved with electron beam control, and the demonstrated effectiveness of microchannel cooling. Our electron beam penetration depth measurements agree with our Monte-Carlo calculations. We have not observed electron beam damage in diamond for beammore » energies up to 150 keV. In this paper we describe our experimental and calculational results and research objectives.« less