Towards All-Inorganic Transport Layers for Wide-Band-Gap Formamidinium Lead Bromide-Based Planar Photovoltaics
- Indian Institute of Technology Bombay, Mumbai (India)
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
Abstract Hybrid perovskite photovoltaic devices heavily rely on the use of organic (rather than inorganic) charge‐transport layers on top of a perovskite absorber layer because of difficulties in depositing inorganic materials on top of these fragile absorber layers. However, in comparison to the unstable and expensive organic transport materials, inorganic charge‐transport layers provide improved charge transport and stability to the device architecture. Here, we report photovoltaic devices using all‐inorganic transport layers in a planar p‐i‐n junction device configuration using formamidinium lead tribromide (FAPbBr 3 ) as an absorber. Efficient planar devices are obtained through atomic layer deposition of nickel oxide and sputtered zinc oxide as hole‐ and electron‐transport materials, respectively. Using only inorganic charge‐transport layers resulted in planar FAPbBr 3 devices with a power conversion efficiency of 6.75 % at an open‐circuit voltage of 1.23 V. The transition of planar FAPbBr 3 devices making from all‐organic towards all–inorganic charge‐transport layers is studied in detail.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1395106
- Alternate ID(s):
- OSTI ID: 1378391
- Report Number(s):
- NREL/JA-5K00-70190
- Journal Information:
- Energy Technology, Vol. 5, Issue 10; ISSN 2194-4288
- Publisher:
- WileyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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