Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

Keech, Ryan; Morandi, Carl; Wallace, Margeaux; Esteves, Giovanni; Denis, Lyndsey; Guerrier, Jonathon; Johnson-Wilke, Raegan L.; Fancher, Chris M.; Jones, Jacob L.; Trolier-McKinstry, Susan

doi:10.1111/jace.14927

Title: Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

Journal Article · Tue Apr 11 00:00:00 EDT 2017 · Journal of the American Ceramic Society

DOI:https://doi.org/10.1111/jace.14927· OSTI ID:1376523

^[1]; Morandi, Carl ^[1]; Wallace, Margeaux ^[1]; Esteves, Giovanni ^[2]; Denis, Lyndsey ^[1]; Guerrier, Jonathon ^[2]; Johnson-Wilke, Raegan L. ^[3];

^[2]; Jones, Jacob L. ^[2]; Trolier-McKinstry, Susan ^[1]

Pennsylvania State Univ., University Park, PA (United States)
North Carolina State Univ., Raleigh, NC (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Abstract Continued reduction in length scales associated with many ferroelectric film‐based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate‐lead titanate (70 PMN ‐30 PT ) thin films were studied over the thickness range of 100‐350 nm for the relative contributions to property thickness dependence from interfacial and grain‐boundary low permittivity layers. Epitaxial PMN ‐ PT films were grown on SrRuO ₃ /(001)SrTiO ₃ , while polycrystalline films with {001}‐Lotgering factors >0.96 were grown on Pt/TiO ₂ /SiO ₂ /Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at high fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC ‐biased and temperature‐dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness‐dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC05-00OR22725; AC02-06CH11357; 1409399; 1410907; 1420620

OSTI ID:: 1376523

Alternate ID(s):: OSTI ID: 1378385

Journal Information:: Journal of the American Ceramic Society, Vol. 100, Issue 9; ISSN 0002-7820

Publisher:: American Ceramic SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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