skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1378072
Report Number(s):
SAND2016-8216C
646845
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the International Conference on Diamond and Carbon Materials held September 4-8, 2016 in Montpellier, France.
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, Shin-Ichiro Sato, Takahiro Makino, Takeshi Ohshima, Tomohiro Kamiya, Wataru Kada, Osamu Hanaizumi, Velsko Gris, Nato Skukan, Ivan Sudic, Milko Jaksic, and Michal Pomorski. Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.. United States: N. p., 2016. Web.
Vizkelethy, Gyorgy, Shin-Ichiro Sato, Takahiro Makino, Takeshi Ohshima, Tomohiro Kamiya, Wataru Kada, Osamu Hanaizumi, Velsko Gris, Nato Skukan, Ivan Sudic, Milko Jaksic, & Michal Pomorski. Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.. United States.
Vizkelethy, Gyorgy, Shin-Ichiro Sato, Takahiro Makino, Takeshi Ohshima, Tomohiro Kamiya, Wataru Kada, Osamu Hanaizumi, Velsko Gris, Nato Skukan, Ivan Sudic, Milko Jaksic, and Michal Pomorski. 2016. "Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.". United States. doi:. https://www.osti.gov/servlets/purl/1378072.
@article{osti_1378072,
title = {Transient Current Induced in Thin Film Diamonds by Swift heavy Ions.},
author = {Vizkelethy, Gyorgy and Shin-Ichiro Sato and Takahiro Makino and Takeshi Ohshima and Tomohiro Kamiya and Wataru Kada and Osamu Hanaizumi and Velsko Gris and Nato Skukan and Ivan Sudic and Milko Jaksic and Michal Pomorski},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 8
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5 + and 45 MeV Si 7 +) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended.more » Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.« less
  • Fractal and multifractal characteristics of self-affine surfaces of BaF{sub 2} thin films, deposited on crystalline Si 〈1 1 1〉 substrate at room temperature, were studied. Self-affine surfaces were prepared by irradiation of 120 MeV Ag{sup 9+} ions which modified the surface morphology at nanometer scale. The surface morphology of virgin thin film and those irradiated with different ion fluences are characterized by atomic force microscopy technique. The surface roughness (interface width) shows monotonic decrease with ion fluences, while the other parameters, such as lateral correlation length, roughness exponent, and fractal dimension, did not show either monotonic decrease or increase in nature.more » The self-affine nature of the films is further confirmed by autocorrelation function. The power spectral density of thin films surfaces exhibits inverse power law variation with spatial frequency, suggesting the existence of fractal component in surface morphology. The multifractal detrended fluctuation analysis based on the partition function approach is also performed on virgin and irradiated thin films. It is found that the partition function exhibits the power law behavior with the segment size. Moreover, it is also seen that the scaling exponents vary nonlinearly with the moment, thereby exhibiting the multifractal nature.« less
  • The authors demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at various wavelengths to zero. They adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, they need to consider both space charge contributed by photogenerated carriers and carrier recombination which disturb the internal field. Theymore » use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the total charge collected is less than 10{sup {minus}10} C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibrium state, (2) The measuring time window is about 1--6 {micro}s following the displacement current. Typically the RC constant of diode is <1 {micro}s and the rise time of the forward-bias recombination current is 6.0 x {micro}s. They apply the signal average to process the forward-bias voltage. The error is within {+-}0.05 V. With this technique they can study the effect of variety of structure design or processing on the device performance.« less
  • Heavy ion beams from the BNL Tandem Van de Graaff accelerators will be made available for radiobiology studies on cell cultures. Beam energy losses need to be minimized both in the vacuum window and in the air in order to achieve the ranges required for the cells to be studied. This is particularly challenging for ions heavier than iron. The design is presented of a 0.4-inch diameter Havar film window that will satisfy these requirements. Films as thin as 80 microinches were successfully pressure tested. The final thickness to be used may be slightly larger to help in achieving pinmore » hole free windows. We discuss design considerations and present pressure and vacuum test results as well as tests with heavy ion beams.« less