Modification of electrical properties of topological insulators
Patent
·
OSTI ID:1377859
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- National Technology & Engineering Solutions of Sandia, LLC
- Patent Number(s):
- 9,748,345
- Application Number:
- 15/177,215
- OSTI ID:
- 1377859
- Resource Relation:
- Patent File Date: 2016 Jun 08
- Country of Publication:
- United States
- Language:
- English
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