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Title: Waveguide embedded plasmon laser with multiplexing and electrical modulation

Abstract

This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.

Inventors:
;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1377827
Patent Number(s):
9,748,736
Application Number:
14/052,504
Assignee:
The Regents of The University of California LBNL
DOE Contract Number:  
AC02-05CH11231
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 11
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Ma, Ren-min, and Zhang, Xiang. Waveguide embedded plasmon laser with multiplexing and electrical modulation. United States: N. p., 2017. Web.
Ma, Ren-min, & Zhang, Xiang. Waveguide embedded plasmon laser with multiplexing and electrical modulation. United States.
Ma, Ren-min, and Zhang, Xiang. Tue . "Waveguide embedded plasmon laser with multiplexing and electrical modulation". United States. doi:. https://www.osti.gov/servlets/purl/1377827.
@article{osti_1377827,
title = {Waveguide embedded plasmon laser with multiplexing and electrical modulation},
author = {Ma, Ren-min and Zhang, Xiang},
abstractNote = {This disclosure provides systems, methods, and apparatus related to nanometer scale lasers. In one aspect, a device includes a substrate, a line of metal disposed on the substrate, an insulating material disposed on the line of metal, and a line of semiconductor material disposed on the substrate and the insulating material. The line of semiconductor material overlaying the line of metal, disposed on the insulating material, forms a plasmonic cavity.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 29 00:00:00 EDT 2017},
month = {Tue Aug 29 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

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