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Title: Controllable growth of vertically aligned graphene on C-face SiC

Abstract

We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d 0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.

Authors:
 [1];  [2];  [3];  [4];  [5];  [5];  [1];  [1];  [6];  [6];  [1];  [1];  [1]
  1. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research
  2. Beijing Information and Technology Univ. (China). Dept. of Basic Science
  3. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research; Dublin Inst. of Technology (Ireland). School of Physics
  4. Sichuan Univ., Chengdu (China). School pf Chemical Engineering
  5. Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany). Institute of Ion Beam Physics and Materials Research; Technische Univ. Dresden (Germany)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Helmholtz Postdoc Programme
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1377529
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 6; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Condensed-matter physics; Synthesis of graphene

Citation Formats

Liu, Yu, Chen, Lianlian, Hilliard, Donovan, Huang, Qing-song, Liu, Fang, Wang, Mao, Böttger, Roman, Hübner, René, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, and Zhou, Shengqiang. Controllable growth of vertically aligned graphene on C-face SiC. United States: N. p., 2016. Web. doi:10.1038/srep34814.
Liu, Yu, Chen, Lianlian, Hilliard, Donovan, Huang, Qing-song, Liu, Fang, Wang, Mao, Böttger, Roman, Hübner, René, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, & Zhou, Shengqiang. Controllable growth of vertically aligned graphene on C-face SiC. United States. doi:10.1038/srep34814.
Liu, Yu, Chen, Lianlian, Hilliard, Donovan, Huang, Qing-song, Liu, Fang, Wang, Mao, Böttger, Roman, Hübner, René, N’Diaye, Alpha T., Arenholz, Elke, Heera, Viton, Skorupa, Wolfgang, and Zhou, Shengqiang. Thu . "Controllable growth of vertically aligned graphene on C-face SiC". United States. doi:10.1038/srep34814. https://www.osti.gov/servlets/purl/1377529.
@article{osti_1377529,
title = {Controllable growth of vertically aligned graphene on C-face SiC},
author = {Liu, Yu and Chen, Lianlian and Hilliard, Donovan and Huang, Qing-song and Liu, Fang and Wang, Mao and Böttger, Roman and Hübner, René and N’Diaye, Alpha T. and Arenholz, Elke and Heera, Viton and Skorupa, Wolfgang and Zhou, Shengqiang},
abstractNote = {We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0 magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.},
doi = {10.1038/srep34814},
journal = {Scientific Reports},
number = 1,
volume = 6,
place = {United States},
year = {Thu Oct 06 00:00:00 EDT 2016},
month = {Thu Oct 06 00:00:00 EDT 2016}
}

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Works referenced in this record:

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