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Title: AC stress and electronic effects on SET switching of HfO 2 RRAM

Authors:
 [1];  [2];  [2];  [2];  [2];  [3]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA
  3. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1377089
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 111 Journal Issue: 9; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., and Hou, Tuo-Hung. AC stress and electronic effects on SET switching of HfO 2 RRAM. United States: N. p., 2017. Web. doi:10.1063/1.4991576.
Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., & Hou, Tuo-Hung. AC stress and electronic effects on SET switching of HfO 2 RRAM. United States. doi:10.1063/1.4991576.
Liu, Jen-Chieh, Magyari-Köpe, Blanka, Qin, Shengjun, Zheng, Xin, Philip Wong, H. -S., and Hou, Tuo-Hung. Mon . "AC stress and electronic effects on SET switching of HfO 2 RRAM". United States. doi:10.1063/1.4991576.
@article{osti_1377089,
title = {AC stress and electronic effects on SET switching of HfO 2 RRAM},
author = {Liu, Jen-Chieh and Magyari-Köpe, Blanka and Qin, Shengjun and Zheng, Xin and Philip Wong, H. -S. and Hou, Tuo-Hung},
abstractNote = {},
doi = {10.1063/1.4991576},
journal = {Applied Physics Letters},
number = 9,
volume = 111,
place = {United States},
year = {Mon Aug 28 00:00:00 EDT 2017},
month = {Mon Aug 28 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4991576

Citation Metrics:
Cited by: 1 work
Citation information provided by
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Works referenced in this record:

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
journal, July 2009

  • Waser, Rainer; Dittmann, Regina; Staikov, Georgi
  • Advanced Materials, Vol. 21, Issue 25-26, p. 2632-2663
  • DOI: 10.1002/adma.200900375

Projector augmented-wave method
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Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996