skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Enhancing the barrier height in oxide Schottky junctions using interface dipoles

Authors:
 [1];  [2];  [1]
  1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
  2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA, Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1377088
Grant/Contract Number:
AC02-76SF00515
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 9; Related Information: CHORUS Timestamp: 2018-02-14 13:39:45; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Tachikawa, Takashi, Hwang, Harold Y., and Hikita, Yasuyuki. Enhancing the barrier height in oxide Schottky junctions using interface dipoles. United States: N. p., 2017. Web. doi:10.1063/1.4991691.
Tachikawa, Takashi, Hwang, Harold Y., & Hikita, Yasuyuki. Enhancing the barrier height in oxide Schottky junctions using interface dipoles. United States. doi:10.1063/1.4991691.
Tachikawa, Takashi, Hwang, Harold Y., and Hikita, Yasuyuki. 2017. "Enhancing the barrier height in oxide Schottky junctions using interface dipoles". United States. doi:10.1063/1.4991691.
@article{osti_1377088,
title = {Enhancing the barrier height in oxide Schottky junctions using interface dipoles},
author = {Tachikawa, Takashi and Hwang, Harold Y. and Hikita, Yasuyuki},
abstractNote = {},
doi = {10.1063/1.4991691},
journal = {Applied Physics Letters},
number = 9,
volume = 111,
place = {United States},
year = 2017,
month = 8
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 28, 2018
Publisher's Accepted Manuscript

Save / Share:
  • We report the experimental demonstration of Fermi level depinning using nickel oxide (NiO) as the insulator material in metal-insulator-semiconductor (M-I-S) contacts. Using this contact, we show less than 0.1 eV barrier height for holes in platinum/NiO/silicon (Pt/NiO/p-Si) contact. Overall, the pinning factor was improved from 0.08 (metal/Si) to 0.26 (metal/NiO/Si). The experimental results show good agreement with that obtained from theoretical calculation. NiO offers high conduction band offset and low valence band offset with Si. By reducing Schottky barrier height, this contact can be used as a carrier selective contact allowing hole transport but blocking electron transport, which is important formore » high efficiency in photonic applications such as photovoltaics and optical detectors.« less
  • The modulation of Schottky barrier height of metal/Ge inserting an amorphous Ge layer has been demonstrated. It is interested that the Schottky barrier height of Al/amorphous-Ge/n-Ge junctions is oscillated with increase of the a-Ge thickness from 0 to 10 nm, and when the thickness reaches above 10 nm, the Al/amorphous-Ge/n-Ge shows ohmic characteristics. Electron hopping through localized states of a-Ge layer, the alleviation of metal induced gap states, as well as the termination of dangling bonds at the amorphous-Ge/n-Ge interface are proposed to explain the anomalous modulation of Schottky barrier height.
  • The Schottky barrier height at the Pt/GaAs interface has been measured as a function of pressure using a diamond anvil cell. The Schottky barrier height was found to shift to higher energy with a linear pressure coefficient of 11 meV/kbar, which is equal to the pressure coefficient of the fundamental gap of GaAs and with a nonlinear coefficient of -0.26 meV/kbar/sup 2/. These results are discussed in terms of defect models which have been proposed to explain the Fermi level pinning in Schottky barriers.
  • Different interfacial structures are found for Yb/GaAs(001) contacts with different Yb thicknesses, namely 3 and 20 A, by grazing-incidence x-ray diffraction with the use of synchrotron radiation. Different Schottky-barrier height values are also found for these samples. It is concluded that the metal-semiconductor contact, accompanied by reaction and diffusion, is homogeneous in the vicinity of the interface and that the Schottky-barrier height is not finally determined at the initial stage of interface formation for this system.
  • Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contactmore » resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.« less