High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

Xia, Zhenyang; Zang, Kai; Liu, Dong; Zhou, Ming; Kim, Tong -June; Zhang, Huilong; Xue, Muyu; Park, Jeongpil; Morea, Matthew; Ryu, Jae Ha; Chang, Tzu -Hsuan; Kim, Jisoo; Gong, Shaoqin; Kamins, Theodore I.; Yu, Zongfu; Wang, Zhehui; Harris, James S.; Ma, Zhenqiang

doi:10.1063/1.4985591

Title: High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

Journal Article · Mon Aug 21 00:00:00 EDT 2017 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4985591· OSTI ID:1377062

Xia, Zhenyang ^[1];

^[2];

^[1]; Zhou, Ming ^[1]; Kim, Tong -June ^[1]; Zhang, Huilong ^[1];

^[2];

^[1];

^[2]; Ryu, Jae Ha ^[1]; Chang, Tzu -Hsuan ^[1]; Kim, Jisoo ^[1]; Gong, Shaoqin ^[1];

^[2]; Yu, Zongfu ^[1];

^[3]; Harris, James S. ^[2]; Ma, Zhenqiang ^[1]

Univ. of Wisconsin, Madison, WI (United States)
Stanford Univ., Stanford, CA (United States)
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

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Research Organization:: Univ. of Wisconsin, Madison, WI (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP)

Grant/Contract Number:: NA0002915; AC52-06NA25396

OSTI ID:: 1377062

Alternate ID(s):: OSTI ID: 1376762; OSTI ID: 1481993

Report Number(s):: LA-UR-18-21146

Journal Information:: Applied Physics Letters, Vol. 111, Issue 8; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 8 works

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References (25)

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