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Title: Electrostatic tuning of magnetism at the conducting (111) (La0.3Sr0.7)(Al 0.65Ta0.35)/SrTiO3 interface

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4986912· OSTI ID:1473860
 [1];  [2]; ORCiD logo [2];  [3]; ORCiD logo [4];  [1]
  1. Northwestern Univ., Evanston, IL (United States). Dept. of Physics
  2. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics
  3. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, and Dept. of Physics, and NUS Graduate School for Integrative Sciences and Engineering
  4. National Univ. of Singapore (Singapore). NUSNNI-Nanocore, Dept. of Physics, NUS Graduate School for Integrative Sciences and Engineering, Dept. of Electrical and Computer Engineering, and Dept. of Material Science and Engineering

We present measurements of the low temperature electrical transport properties of the two dimensional carrier gas that forms at the interface of (111) (La0.3Sr0.7)(Al0.65Ta0.35)/SrTiO3 as a function of applied back gate voltage, Vg. As is found in (111) LaAlO3/SrTiO3 interfaces, the low-field Hall coefficient is electron-like but shows a sharp reduction in magnitude below V g~ 20 V, indicating the presence of hole-like carriers in the system. This same value of Vg correlates approximately with the gate voltage below which the magnetoresistance evolves from nonhysteretic to hysteretic behavior at millikelvin temperatures, signaling the onset of magnetic order in the system. Finally, we believe our results can provide insight into the mechanism of magnetism in SrTiO3 based systems.

Research Organization:
Northwestern Univ., Evanston, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
FG02-06ER46346
OSTI ID:
1473860
Alternate ID(s):
OSTI ID: 1376916
Journal Information:
Applied Physics Letters, Vol. 111, Issue 8; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

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Cited By (2)

Interface Engineering and Emergent Phenomena in Oxide Heterostructures journal August 2018
The role of oxide interfaces in highly confined electronic and ionic conductors journal January 2019