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Title: Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films

Abstract

Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO 3 /(001)SrTiO 3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO 2/SiO 2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at high fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations,more » and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.« less

Authors:
ORCiD logo [1];  [1];  [1];  [2];  [1];  [2];  [3]; ORCiD logo [2];  [2];  [1]
  1. Pennsylvania State Univ., University Park, PA (United States)
  2. North Carolina State Univ., Raleigh, NC (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1376523
Alternate Identifier(s):
OSTI ID: 1378385
Grant/Contract Number:  
AC05-00OR22725; AC02-06CH11357; 1409399; 1410907; 1420620; DE‐AC02‐06CH11357
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Volume: 100; Journal Issue: 9; Journal ID: ISSN 0002-7820
Publisher:
American Ceramic Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; dielectric materials/properties; ferroelectricity/ferroelectric materials; piezoelectric materials/properties; thin films

Citation Formats

Keech, Ryan, Morandi, Carl, Wallace, Margeaux, Esteves, Giovanni, Denis, Lyndsey, Guerrier, Jonathon, Johnson-Wilke, Raegan L., Fancher, Chris M., Jones, Jacob L., and Trolier-McKinstry, Susan. Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films. United States: N. p., 2017. Web. doi:10.1111/jace.14927.
Keech, Ryan, Morandi, Carl, Wallace, Margeaux, Esteves, Giovanni, Denis, Lyndsey, Guerrier, Jonathon, Johnson-Wilke, Raegan L., Fancher, Chris M., Jones, Jacob L., & Trolier-McKinstry, Susan. Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films. United States. doi:10.1111/jace.14927.
Keech, Ryan, Morandi, Carl, Wallace, Margeaux, Esteves, Giovanni, Denis, Lyndsey, Guerrier, Jonathon, Johnson-Wilke, Raegan L., Fancher, Chris M., Jones, Jacob L., and Trolier-McKinstry, Susan. Tue . "Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films". United States. doi:10.1111/jace.14927. https://www.osti.gov/servlets/purl/1376523.
@article{osti_1376523,
title = {Thickness-dependent domain wall reorientation in 70/30 lead magnesium niobate- lead titanate thin films},
author = {Keech, Ryan and Morandi, Carl and Wallace, Margeaux and Esteves, Giovanni and Denis, Lyndsey and Guerrier, Jonathon and Johnson-Wilke, Raegan L. and Fancher, Chris M. and Jones, Jacob L. and Trolier-McKinstry, Susan},
abstractNote = {Continued reduction in length scales associated with many ferroelectric film-based technologies is contingent on retaining the functional properties as the film thickness is reduced. Epitaxial and polycrystalline lead magnesium niobate - lead titanate (70PMN-30PT) thin films were studied over the thickness range of 100-350 nm for the relative contributions to property thickness dependence from interfacial and grain boundary low permittivity layers. Epitaxial PMN-PT films were grown on SrRuO3 /(001)SrTiO3, while polycrystalline films with {001}-Lotgering factors >0.96 were grown on Pt/TiO2/SiO2/Si substrates via chemical solution deposition. Both film types exhibited similar relative permittivities of ~300 at high fields at all measured thicknesses with highly crystalline electrode/dielectric interfaces. These results, with the DC-biased and temperature dependent dielectric characterization, suggest irreversible domain wall mobility is the major contributor to the overall dielectric response and its thickness dependence. In epitaxial films, the irreversible Rayleigh coefficients reduced 85% upon decreasing thickness from 350 to 100 nm. The temperature at which a peak in the relative permittivity is observed was the only measured small signal quantity which was more thickness dependent in polycrystalline than epitaxial films. This is attributed to the relaxor nature present in the films, potentially stabilized by defect concentrations, and/or chemical inhomogeneity. Finally, the effective interfacial layers are found to contribute to the measured thickness dependence in the longitudinal piezoelectric coefficient.},
doi = {10.1111/jace.14927},
journal = {Journal of the American Ceramic Society},
number = 9,
volume = 100,
place = {United States},
year = {Tue Apr 11 00:00:00 EDT 2017},
month = {Tue Apr 11 00:00:00 EDT 2017}
}

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Works referenced in this record:

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Ferroelectricity in thin perovskite films
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