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Title: Predicting synergy in atomic layer etching

Abstract

Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO 2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Lam Research Corp., Fremont, CA (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1376399
DOE Contract Number:  
AC05-00OR22725
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 35; Journal Issue: 5
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Kim, Taeseung, Lill, Thorsten, Kabansky, Alexander, Hudson, Eric A., Ohba, Tomihito, Nojiri, Kazuo, Yu, Jengyi, Wise, Rich, Berry, Ivan L., Pan, Yang, Marks, Jeffrey, and Gottscho, Richard A.. Predicting synergy in atomic layer etching. United States: N. p., 2017. Web. doi:10.1116/1.4979019.
Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Kim, Taeseung, Lill, Thorsten, Kabansky, Alexander, Hudson, Eric A., Ohba, Tomihito, Nojiri, Kazuo, Yu, Jengyi, Wise, Rich, Berry, Ivan L., Pan, Yang, Marks, Jeffrey, & Gottscho, Richard A.. Predicting synergy in atomic layer etching. United States. doi:10.1116/1.4979019.
Kanarik, Keren J., Tan, Samantha, Yang, Wenbing, Kim, Taeseung, Lill, Thorsten, Kabansky, Alexander, Hudson, Eric A., Ohba, Tomihito, Nojiri, Kazuo, Yu, Jengyi, Wise, Rich, Berry, Ivan L., Pan, Yang, Marks, Jeffrey, and Gottscho, Richard A.. Mon . "Predicting synergy in atomic layer etching". United States. doi:10.1116/1.4979019. https://www.osti.gov/servlets/purl/1376399.
@article{osti_1376399,
title = {Predicting synergy in atomic layer etching},
author = {Kanarik, Keren J. and Tan, Samantha and Yang, Wenbing and Kim, Taeseung and Lill, Thorsten and Kabansky, Alexander and Hudson, Eric A. and Ohba, Tomihito and Nojiri, Kazuo and Yu, Jengyi and Wise, Rich and Berry, Ivan L. and Pan, Yang and Marks, Jeffrey and Gottscho, Richard A.},
abstractNote = {Atomic layer etching (ALE) is a multistep process used today in manufacturing for removing ultrathin layers of material. In this article, the authors report on ALE of Si, Ge, C, W, GaN, and SiO2 using a directional (anisotropic) plasma-enhanced approach. The authors analyze these systems by defining an “ALE synergy” parameter which quantifies the degree to which a process approaches the ideal ALE regime. This parameter is inspired by the ion-neutral synergy concept introduced in the 1979 paper by Coburn and Winters. ALE synergy is related to the energetics of underlying surface interactions and is understood in terms of energy criteria for the energy barriers involved in the reactions. Synergistic behavior is observed for all of the systems studied, with each exhibiting behavior unique to the reactant–material combination. By systematically studying atomic layer etching of a group of materials, the authors show that ALE synergy scales with the surface binding energy of the bulk material. This insight explains why some materials are more or less amenable to the directional ALE approach. Furthermore, they conclude that ALE is both simpler to understand than conventional plasma etch processing and is applicable to metals, semiconductors, and dielectrics.},
doi = {10.1116/1.4979019},
journal = {Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films},
number = 5,
volume = 35,
place = {United States},
year = {Mon Mar 27 00:00:00 EDT 2017},
month = {Mon Mar 27 00:00:00 EDT 2017}
}