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Title: Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures

Abstract

Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm 2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that the presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.

Authors:
 [1];  [2];  [2];  [2];  [2];  [2];  [2];  [2]
  1. University of Tennessee, Knoxville (UTK)
  2. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1376387
Grant/Contract Number:
AC05-00OR22725
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Nanotechnology
Additional Journal Information:
Journal Volume: 28; Journal Issue: 28; Journal ID: ISSN 0957-4484
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; graphene; hexagonal boron nitride; heterostructures; interlayer resistance; impedance

Citation Formats

Voyloy, Dimitry, Lassiter, Matthew G., Sokolov, Alexei P., Polyzos, Georgios, Vlassiouk, Ivan V., Sharma, Jaswinder K., Stehle, Yijing Y., and Park, Jaehyeung. Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures. United States: N. p., 2017. Web. doi:10.1088/1361-6528/aa7589.
Voyloy, Dimitry, Lassiter, Matthew G., Sokolov, Alexei P., Polyzos, Georgios, Vlassiouk, Ivan V., Sharma, Jaswinder K., Stehle, Yijing Y., & Park, Jaehyeung. Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures. United States. doi:10.1088/1361-6528/aa7589.
Voyloy, Dimitry, Lassiter, Matthew G., Sokolov, Alexei P., Polyzos, Georgios, Vlassiouk, Ivan V., Sharma, Jaswinder K., Stehle, Yijing Y., and Park, Jaehyeung. Mon . "Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures". United States. doi:10.1088/1361-6528/aa7589.
@article{osti_1376387,
title = {Effect of polymer residues on the electrical properties of large-area graphene–hexagonal boron nitride planar heterostructures},
author = {Voyloy, Dimitry and Lassiter, Matthew G. and Sokolov, Alexei P. and Polyzos, Georgios and Vlassiouk, Ivan V. and Sharma, Jaswinder K. and Stehle, Yijing Y. and Park, Jaehyeung},
abstractNote = {Polymer residue plays an important role in the performance of 2D heterostructured materials. Herein, we study the effect of polymer residual impurities on the electrical properties of graphene–boron nitride planar heterostructures. Large-area graphene (Gr) and hexagonal boron nitride (h-BN) monolayers were synthesized using chemical vapor deposition techniques. Atomic van-der-Waals heterostructure layers based on varied configurations of Gr and h-BN layers were assembled. The average interlayer resistance of the heterojunctions over a 1 cm2 area for several planar heterostructure configurations was assessed by impedance spectroscopy and modeled by equivalent electrical circuits. As a result, conductive AFM measurements showed that the presence of polymer residues on the surface of the Gr and h-BN monolayers resulted in significant resistance deviations over nanoscale regions.},
doi = {10.1088/1361-6528/aa7589},
journal = {Nanotechnology},
number = 28,
volume = 28,
place = {United States},
year = {Mon Jun 19 00:00:00 EDT 2017},
month = {Mon Jun 19 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
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  • Two-dimensional (2D) interfaces between crystalline materials have been shown to generate unusual interfacial electronic states in complex oxides1-4. Recently, a onedimensional (1D) polar-on-nonpolar interface has been realized in hexagonal boron nitride (hBN) and graphene heterostructures 5-10, where a coherent 1D boundary is expected to possess peculiar electronic states dictated by edge states of graphene and the polarity of hBN 11-13. Here we present a combined scanning tunneling microscopy (STM) and firstprinciples theory study of the graphene-hBN boundary to provide a rare glimpse into the spatial and energetic distributions of the 1D boundary states in real-space. The interfaces studied here aremore » crystallographically coherent with sharp transitions from graphene zigzag edges to B (or N) terminated hBN atomic layers on a Cu foil substrate5. The revealed boundary states are about 0.6 eV below or above the Fermi energy depending on the termination of the hBN at the boundary, and are extended along but localized at the boundary with a lateral thickness of 2-3nm. These results suggest that unconventional physical effects similar to those observed at 2D interfaces can also exist in lower dimensions, opening a route for tuning of electronic properties at interfaces in 2D heterostructures.« less
  • Results of ab initio study of magnetism and transport properties of charge carriers in zigzag graphene nanoribbons (ZGNR) on hexagonal boron nitride (h-BN(0001)) substrate are presented within the density functional theory framework. Peculiarities of the interface band structure and its role in the formation of magnetism and transport properties of the ZGNR/h-BN(0001) heterostructure have been studied using two different density functional approximations. The effect of the substrate and graphene nanoribbons width on the low-energy spectrum of π-electrons, local magnetic moments on atoms of interface, and charge carriers mobility in the ZGNR/h-BN(0001) heterostructures have been established for the first time. Themore » regularity consisting in the charge carrier mobility growth with decrease of dimers number in nanoribbon was also established. It is found that the charge carriers mobility in the N-ZGNR/h-BN(0001) (N—number of carbon (C) dimers) heterostructures is 5% higher than in freestanding ZGNR.« less
  • The paper presents the results of ab initio study of the opportunities for tuning the band structure, magnetic and transport properties of zigzag graphene nanoribbon (8-ZGNR) on hexagonal boron nitride (h-BN(0001)) semiconductor heterostructure by transverse electric field (E{sub ext}). This study was performed within the framework of the density functional theory (DFT) using Grimme's (DFT-D2) scheme. We established the critical values of E{sub ext} for the 8-ZGNR/h-BN(0001) heterostructure, thereby providing for semiconductor-halfmetal transition in one of electron spin configurations. This study also showed that the degeneration in energy of the localized edge states is removed when E{sub ext} is applied.more » In ZGNR/h-BN (0001) heterostructure, value of the splitting energy was higher than one in ZGNRs without substrate. We determined the effect of low E{sub ext} applied to the 8-ZGNR/h-BN (0001) semiconductor heterostructure on the preserved local magnetic moment (LMM) (0.3μ{sub B}) of edge carbon atoms. The transport properties of the 8-ZGNR/h-BN(0001) semiconductor heterostructure can be controlled using E{sub ext}. In particular, at a critical value of the positive potential, the electron mobility can increase to 7× 10{sup 5} cm{sup 2}/V s or remain at zero in the spin-up and spin-down electron subsystems, respectively. We established that magnetic moments (MMs), band gaps, and carrier mobility can be altered using E{sub ext}. These abilities enable the use of 8-ZGNR/h-BN(0001) semiconductor heterostructure in spintronics.« less
  • Van der Waals (vdW) heterostructures consist of isolated atomic planar structures, assembled layer- by-layer into desired structures in a well-defined sequence. Graphene deposited on hexagonal boron nitride (h-BN) has been first considered as a testbed system for vdW heterostructures, and many others have been demonstrated both theoretically and experimentally, revealing many attractive properties and phenomena. However, much less emphasis has been placed on how graphene actively affects h-BN properties. Here, we perform local probe measurements on single-layer h-BN grown over graphene and highlight the manifestation of a proximity effect that significantly affects the electronic properties of h-BN due to itsmore » coupling with the underlying graphene. We find electronic states originating from the graphene layer and the Cu substrate to be injected into the wide electronic gap of the h-BN top layer. Such proximity effect is further confirmed in a study of the variation of h-BN in-gap states with interlayer couplings, elucidated using a combination of topographical/ spectroscopic measurements and first-principles density functional theory calculations. In conclusion, the findings of this work indicate the potential of mutually engineering electronic properties of the components of vdW heterostructures.« less