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Title: Observation of the symmetry of core states of a single Fe impurity in GaAs

Authors:
; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1376268
Grant/Contract Number:
SC0016447
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 96; Journal Issue: 7; Related Information: CHORUS Timestamp: 2017-08-23 17:04:34; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Bocquel, J., Kortan, V. R., Campion, R. P., Gallagher, B. L., Flatté, M. E., and Koenraad, P. M. Observation of the symmetry of core states of a single Fe impurity in GaAs. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.075207.
Bocquel, J., Kortan, V. R., Campion, R. P., Gallagher, B. L., Flatté, M. E., & Koenraad, P. M. Observation of the symmetry of core states of a single Fe impurity in GaAs. United States. doi:10.1103/PhysRevB.96.075207.
Bocquel, J., Kortan, V. R., Campion, R. P., Gallagher, B. L., Flatté, M. E., and Koenraad, P. M. 2017. "Observation of the symmetry of core states of a single Fe impurity in GaAs". United States. doi:10.1103/PhysRevB.96.075207.
@article{osti_1376268,
title = {Observation of the symmetry of core states of a single Fe impurity in GaAs},
author = {Bocquel, J. and Kortan, V. R. and Campion, R. P. and Gallagher, B. L. and Flatté, M. E. and Koenraad, P. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.96.075207},
journal = {Physical Review B},
number = 7,
volume = 96,
place = {United States},
year = 2017,
month = 8
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 23, 2018
Publisher's Accepted Manuscript

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  • Experimental investigation of the time dependence of impurity photoconductivity in n-GaAs is carried out upon pulsed optical excitation. It is shown that a change in the photoconductivity is determined mainly by electron cooling in the first 20 ns after photoexcitation. A theoretical model for describing the dependences under observation is proposed.
  • The advances in submicron lithography on semiconductor devices allow to produce very narrow inversion channels in which the electron gas behaves as quasi-one-dimensional. The presence of shallow donor impurities introduces bound states for electrons which have their binding energies depending on the impurity location in the plane perpendicular to the channel. In this paper, the authors calculate these binding energies and plot the iso-energy curves for the dilute regime, assuming a confinement potential separable into a square well (caused by the barriers at the interfaces creating the quantum well) and an electrically induced harmonic potential in a direction perpendicular tomore » the growth axis.« less
  • Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.
  • A strategy is presented for determining sublattice polarity at defects in compound semiconductors. Core structures of 60-degree and Lomer dislocations in the CdTe/GaAs(001) system have been obtained by the application of maximum-entropy analysis to Z-contrast images (Z is atomic number) obtained in a 300-kilovolt scanning transmission electron microscope. Sixty-degree dislocations were observed to be of the glide type, whereas in the case of Lomer dislocations, both a symmetric (Hornstra-like) core and an unexpected asymmetric structure made up of a fourfold ring were seen. 23 refs., 3 figs.