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Title: Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water

Abstract

To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).

Authors:
ORCiD logo; ; ORCiD logo; ; ORCiD logo; ; ;
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science - Energy Frontier Research Center - Argonne-Northwestern Solar Energy Research (ANSER)
OSTI Identifier:
1375920
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Dalton Transactions
Additional Journal Information:
Journal Volume: 46; Journal Issue: 18; Journal ID: ISSN 1477-9226
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Avila, J. R., Peters, A. W., Li, Zhanyong, Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., Hupp, J. T., and Farha, O. K. Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water. United States: N. p., 2017. Web. doi:10.1039/c6dt02572b.
Avila, J. R., Peters, A. W., Li, Zhanyong, Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., Hupp, J. T., & Farha, O. K. Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water. United States. doi:10.1039/c6dt02572b.
Avila, J. R., Peters, A. W., Li, Zhanyong, Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., Hupp, J. T., and Farha, O. K. Sun . "Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water". United States. doi:10.1039/c6dt02572b.
@article{osti_1375920,
title = {Atomic layer deposition of Cu( i ) oxide films using Cu( ii ) bis(dimethylamino-2-propoxide) and water},
author = {Avila, J. R. and Peters, A. W. and Li, Zhanyong and Ortuño, M. A. and Martinson, A. B. F. and Cramer, C. J. and Hupp, J. T. and Farha, O. K.},
abstractNote = {To grow fIlms of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal– oxide films featuring Cu(I).},
doi = {10.1039/c6dt02572b},
journal = {Dalton Transactions},
issn = {1477-9226},
number = 18,
volume = 46,
place = {United States},
year = {2017},
month = {1}
}

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