Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si
- Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA
- Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA
- Materials Science and Engineering Program University of California San Diego La Jolla CA 92093 USA, Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA, Department of NanoEngineering University of California San Diego La Jolla CA 92093 USA
Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain‐relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN‐on‐Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack‐free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm −2 achieved to date in GaN‐on‐Si is demonstrated. With these advances, the first vertical GaN metal–insulator–semiconductor field‐effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost‐effective high power device paradigm on an Si CMOS platform are demonstrated
- Sponsoring Organization:
- USDOE
- Grant/Contract Number:
- DE‐AC04‐94AL85000
- OSTI ID:
- 1375658
- Journal Information:
- Advanced Materials, Journal Name: Advanced Materials Vol. 29 Journal Issue: 38; ISSN 0935-9648
- Publisher:
- Wiley Blackwell (John Wiley & Sons)Copyright Statement
- Country of Publication:
- Germany
- Language:
- English
Web of Science
Similar Records
Thermal expansion of GaN at low temperatures -- A comparison of bulk and homo- and heteroepitaxial layers
Correlation of Early-Stage Growth Process Conditions with Dislocation Evolution in MOCVD-Based GaP/Si Heteroepitaxy