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Title: Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development.

Abstract

Abstract not provided.

Authors:
; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE Office of Electricity Delivery and Energy Reliability (OE), Power Systems Engineering Research and Development (R&D) (OE-10)
OSTI Identifier:
1375593
Report Number(s):
SAND2016-7815C
646558
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the US Senator Martin Heinrich's 2016 Energy Summit held August 23-24, 2016 in Albuquerque, NM, USA .
Country of Publication:
United States
Language:
English

Citation Formats

Atcitty, Stanley, Ranbir Singh, and Siddarth Sundaresan. Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development.. United States: N. p., 2016. Web.
Atcitty, Stanley, Ranbir Singh, & Siddarth Sundaresan. Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development.. United States.
Atcitty, Stanley, Ranbir Singh, and Siddarth Sundaresan. Mon . "Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development.". United States. doi:. https://www.osti.gov/servlets/purl/1375593.
@article{osti_1375593,
title = {Monolithically Integrated High Voltage Silicon Carbide Switch + Diode Development.},
author = {Atcitty, Stanley and Ranbir Singh and Siddarth Sundaresan},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Aug 01 00:00:00 EDT 2016},
month = {Mon Aug 01 00:00:00 EDT 2016}
}

Conference:
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