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Title: Use of surfactants to control island size and density

Abstract

Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.

Inventors:
; ;
Publication Date:
Research Org.:
University of Utah Research Foundation, Salt Lake City, UT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1375209
Patent Number(s):
9,735,008
Application Number:
14/063,143
Assignee:
University of Utah Research Foundation CHO
DOE Contract Number:  
FG02-04ER46148
Resource Type:
Patent
Resource Relation:
Patent File Date: 2013 Oct 25
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY

Citation Formats

Merrell, Jason, Liu, Feng, and Stringfellow, Gerald B. Use of surfactants to control island size and density. United States: N. p., 2017. Web.
Merrell, Jason, Liu, Feng, & Stringfellow, Gerald B. Use of surfactants to control island size and density. United States.
Merrell, Jason, Liu, Feng, and Stringfellow, Gerald B. Tue . "Use of surfactants to control island size and density". United States. doi:. https://www.osti.gov/servlets/purl/1375209.
@article{osti_1375209,
title = {Use of surfactants to control island size and density},
author = {Merrell, Jason and Liu, Feng and Stringfellow, Gerald B.},
abstractNote = {Methods of controlling island size and density on an OMVPE growth film may comprise adding a surfactant at a critical concentration level, allowing a growth phase for a first period of time, and ending the growth phase when desired island size and density are achieved. For example, the island size and density of an OMVPE grown InGaN thin film may be controlled by adding an antimony surfactant at a critical concentration level.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2017},
month = {Tue Aug 15 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
journal, September 2002

  • Zhang, L.; Tang, H. F.; Schieke, J.
  • Journal of Applied Physics, Vol. 92, Issue 5, p. 2304-2309
  • DOI: 10.1063/1.1495891

Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD
journal, February 2011

  • Sadasivam, Karthikeyan Giri; Shim, Jong-In; Lee, June Key
  • Journal of Nanoscience and Nanotechnology, Vol. 11, Issue 2, p. 1787-1790
  • DOI: 10.1166/jnn.2011.3387