skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electrically driven deep ultraviolet MgZnO lasers at room temperature

Abstract

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [1];  [2];  [1];  [1];  [1]
  1. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering
  2. Univ. of California, Riverside, CA (United States). Dept. of Electrical and Computer Engineering; Sun Yat-Sen Univ., Guangzhou, (China). School of Physics and Engineering
Publication Date:
Research Org.:
Univ. of California, Riverside, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1374978
Grant/Contract Number:
SC0012670
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, and Liu, Jianlin. Electrically driven deep ultraviolet MgZnO lasers at room temperature. United States: N. p., 2017. Web. doi:10.1038/s41598-017-02791-0.
Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, & Liu, Jianlin. Electrically driven deep ultraviolet MgZnO lasers at room temperature. United States. doi:10.1038/s41598-017-02791-0.
Suja, Mohammad, Bashar, Sunayna Binte, Debnath, Bishwajit, Su, Longxing, Shi, Wenhao, Lake, Roger, and Liu, Jianlin. Thu . "Electrically driven deep ultraviolet MgZnO lasers at room temperature". United States. doi:10.1038/s41598-017-02791-0. https://www.osti.gov/servlets/purl/1374978.
@article{osti_1374978,
title = {Electrically driven deep ultraviolet MgZnO lasers at room temperature},
author = {Suja, Mohammad and Bashar, Sunayna Binte and Debnath, Bishwajit and Su, Longxing and Shi, Wenhao and Lake, Roger and Liu, Jianlin},
abstractNote = {Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM) random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.},
doi = {10.1038/s41598-017-02791-0},
journal = {Scientific Reports},
number = 1,
volume = 7,
place = {United States},
year = {Thu Jun 01 00:00:00 EDT 2017},
month = {Thu Jun 01 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Save / Share:
  • High Mg-content single-phase wurtzite MgZnO alloys with a bandgap of 4.35 eV have been obtained on sapphire substrate by introducing a composition-gradient Mg{sub x}Zn{sub 1−x}O buffer layer. By employing the accelerated electrons obtained in a solid-state structure as an excitation source, an emission at around 285 nm, which is originated from the near-band-edge emission of the Mg{sub 0.51}Zn{sub 0.49}O active layer, has been observed. The results reported in this paper may provide a promising route to high performance deep-ultraviolet light-emitting devices by bypassing the challenging doping issues of wide bandgap semiconductors.
  • We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to approx10{sup 18} cm{sup -3} from the background level of 10{sup 16} cm{sup -3}, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at approx10{sup 8} andmore » field-effect mobility at 22.7 cm{sup 2}/V s.« less
  • We report on a GaSb-based type-I laser structure grown by molecular beam epitaxy on a (001) silicon substrate. A thin AlSb nucleation layer followed by a 1 {mu}m thick GaSb buffer layer was used to accommodate the very large lattice mismatch existing with the silicon substrate. Processed devices with mesa geometry exhibited laser operation in pulsed mode with a duty cycle up to 10% at room temperature.
  • We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ∼1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200 MHz.