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Title: Direct observation of spoke evolution in magnetron sputtering

ORCiD logo [1]; ORCiD logo [2]
  1. Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA
  2. Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA, Institute of High Energy Physics, Chinese Academy of Sciences, 19B Yuquan Road, Shijingshan District, Beijing 100049, China
Publication Date:
Sponsoring Org.:
OSTI Identifier:
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Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 6; Related Information: CHORUS Timestamp: 2018-02-15 00:06:51; Journal ID: ISSN 0003-6951
American Institute of Physics
Country of Publication:
United States

Citation Formats

Anders, André, and Yang, Yuchen. Direct observation of spoke evolution in magnetron sputtering. United States: N. p., 2017. Web. doi:10.1063/1.4994192.
Anders, André, & Yang, Yuchen. Direct observation of spoke evolution in magnetron sputtering. United States. doi:10.1063/1.4994192.
Anders, André, and Yang, Yuchen. Mon . "Direct observation of spoke evolution in magnetron sputtering". United States. doi:10.1063/1.4994192.
title = {Direct observation of spoke evolution in magnetron sputtering},
author = {Anders, André and Yang, Yuchen},
abstractNote = {},
doi = {10.1063/1.4994192},
journal = {Applied Physics Letters},
number = 6,
volume = 111,
place = {United States},
year = {Mon Aug 07 00:00:00 EDT 2017},
month = {Mon Aug 07 00:00:00 EDT 2017}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on August 10, 2018
Publisher's Accepted Manuscript

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Cited by: 2works
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  • Vanadium oxide (VO{sub x}) thin films have been deposited by pulsed-DC magnetron sputtering using a metallic vanadium target in a reactive argon and oxygen environment. While the process parameters (power, total pressure, oxygen-to-argon ratio) remained constant, the deposition time was varied to produce films between 75 {+-} 6 and 2901 {+-} 30 A thick, which were then optically and electrically characterized. The complex dielectric function spectra ({epsilon} = {epsilon}{sub 1} + i{epsilon}{sub 2}) of the films from 0.75 to 5.15 eV were extracted by ex situ, multiple-angle spectroscopic ellipsometry (SE) measurements for the series of varied thickness VO{sub x} samples.more » Significant changes in {epsilon} and resistivity occur as a function of thickness, indicating the correlations exist between the electrical and the optical properties over this spectral range. In addition, in situ measurements via real time SE (RTSE) were made on the film grown to the largest thickness to track optical property and structural variations during growth. RTSE was also used to characterize changes in the film occurring after growth was completed, namely during post sputtering in the presence of argon and oxygen while the sample is shielded, and atmospheric exposure. RTSE indicates that the exposure of the film to the argon and oxygen environment, regardless of the shutter isolating the target, causes up to 200 A of the top surface of the deposited film to become more electrically resistive as evidenced by variations in {epsilon}. Exposure of the VO{sub x} thin film to atmospheric conditions introduces a similar change in {epsilon}, but this change occurs throughout the bulk of the film. A combination of these observations with RTSE results indicates that thinner, less ordered VO{sub x} films are more susceptible to drastic changes due to atmospheric exposure and that microstructural variations in this material ultimately control its environmental stability.« less
  • The localized target current density associated with quasi-periodic ionization zones (spokes) has been measured in a high power impulse magnetron sputtering (HiPIMS) discharge using an array of azimuthally separated and electrical isolated probes incorporated into a circular aluminum target. For a particular range of operating conditions (pulse energies up to 2.2 J and argon pressures from 0.2 to 1.9 Pa), strong oscillations in the probe current density are seen with amplitudes up to 52% above a base value. These perturbations, identified as spokes, travel around the discharge above the target in the E×B direction. Using phase information from the angularly separated probes,more » the spoke drift speeds, angular frequencies, and mode number have been determined. Generally, at low HiPIMS pulse energies E{sub p} < 0.8 J, spokes appear to be chaotic in nature (with random arrival times), however as E{sub p} increases, coherent spokes are observed with velocities between 6.5 and 10 km s{sup −1} and mode numbers m = 3 or above. At E{sub p} > 1.8 J, the plasma becomes spoke-free. The boundaries between chaotic, coherent, and no-spoke regions are weakly dependent on pressure. During each HiPIMS pulse, the spoke velocities increase by about 50%. Such an observation is explained by considering spoke velocities to be determined by the critical ionization velocity, which changes as the plasma composition changes during the pulse. From the shape of individual current density oscillations, it appears that the leading edge of the spoke is associated with a slow increase in local current density to the target and the rear with a more rapid decrease. The measurements show that the discharge current density associated with individual spokes is broadly spread over a wide region of the target.« less
  • Reactive sputtering by high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (DCMS) of a Zr target in Ar/H{sub 2} plasmas was employed to deposit Zr-H films on Si(100) substrates, and with H content up to 61 at. % and O contents typically below 0.2 at. % as determined by elastic recoil detection analysis. X-ray photoelectron spectroscopy reveals a chemical shift of ∼0.7 eV to higher binding energies for the Zr-H films compared to pure Zr films, consistent with a charge transfer from Zr to H in a zirconium hydride. X-ray diffraction shows that the films are single-phase δ-ZrH{sub 2} (CaF{submore » 2} type structure) at H content >∼55 at. % and pole figure measurements give a 111 preferred orientation for these films. Scanning electron microscopy cross-section images show a glasslike microstructure for the HiPIMS films, while the DCMS films are columnar. Nanoindentation yield hardness values of 5.5–7 GPa for the δ-ZrH{sub 2} films that is slightly harder than the ∼5 GPa determined for Zr films and with coefficients of friction in the range of 0.12–0.18 to compare with the range of 0.4–0.6 obtained for Zr films. Wear resistance testing show that phase-pure δ-ZrH{sub 2} films deposited by HiPIMS exhibit up to 50 times lower wear rate compared to those containing a secondary Zr phase. Four-point probe measurements give resistivity values in the range of ∼100–120 μΩ cm for the δ-ZrH{sub 2} films, which is slightly higher compared to Zr films with values in the range 70–80 μΩ cm.« less
  • The microstructure and morphology evolution of tin-doped indium oxide (ITO) thin films deposited by radio-frequency magnetron sputtering in different sputtering atmospheres were investigated by X-ray diffraction, X-ray reflectivity, and atomic force microscopy. The surface roughness w increases with increasing film thickness d{sub f}, and exhibits a power law behavior w ∼ d{sub f}{sup β}. The roughness decreases with increasing O{sub 2} flow, while it increases with increasing H{sub 2} flow. The growth exponent β is found to be 0.35, 0.75, and 0.98 for depositions in Ar/10%O{sub 2}, pure Ar, and Ar/10%H{sub 2} atmospheres, respectively. The correlation length ξ increases with film thicknessmore » also with a power law according to ξ ∼ d{sub f}{sup z} with exponents z = 0.36, 0.44, and 0.57 for these three different gas atmospheres, respectively. A combination of local and non-local growth modes in 2 + 1 dimensions is discussed for the ITO growth in this work.« less
  • Multiply charged titanium ions including Ti{sup 4+} were observed in high power impulse magnetron sputtering discharges. Mass/charge spectrometry was used to identify metal ion species. Quadruply charged titanium ions were identified by isotope-induced broadening at mass/charge 12. Due to their high potential energy, Ti{sup 4+} ions give a high yield of secondary electrons, which in turn are likely to be responsible for the generation of multiply charged states.