Synchrotron x-ray study of a low roughness and high efficiency K 2 CsSb photocathode during film growth

Xie, Junqi; Demarteau, Marcel; Wagner, Robert; Schubert, Susanne; Gaowei, Mengjia; Attenkofer, Klaus; Walsh, John; Smedley, John; Wong, Jared; Feng, Jun; Padmore, Howard; Ruiz-Oses, Miguel; Ding, Zihao; Liang, Xue; Muller, Erik; Ben-Zvi, Ilan

doi:10.1088/1361-6463/aa6882

Title: Synchrotron x-ray study of a low roughness and high efficiency K ₂ CsSb photocathode during film growth

Journal Article · Mon Apr 24 00:00:00 EDT 2017 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/aa6882· OSTI ID:1374541

Xie, Junqi ^[1]; Demarteau, Marcel ^[1]; Wagner, Robert ^[1]; Schubert, Susanne ^[2]; Gaowei, Mengjia ^[3]; Attenkofer, Klaus ^[3]; Walsh, John ^[3]; Smedley, John ^[3]; Wong, Jared ^[4]; Feng, Jun ^[4]; Padmore, Howard ^[4]; Ruiz-Oses, Miguel ^[5]; Ding, Zihao ^[5]; Liang, Xue ^[5]; Muller, Erik ^[5]; Ben-Zvi, Ilan ^[6]

Argonne National Lab. (ANL), Argonne, IL (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Stony Brook Univ., NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)

Reduction of roughness to the nm level is critical of achieving the ultimate performance from photocathodes used in high gradient fields. The thrust of this paper is to explore the evolution of roughness during sequential growth, and to show that deposition of multilayer structures consisting of very thin reacted layers results in an nm level smooth photocathode. Synchrotron x-ray methods were applied to study the multi-step growth process of a high efficiency K 2 CsSb photocathode. A transition point of the Sb film grown on Si was observed at the film thickness of ~40 Å with the substrate temperature at 100 °C and the growth rate at 0.1 Å s -1 . The final K 2 CsSb photocathode exhibits a thickness of around five times that of the total deposited Sb film regardless of how the Sb film was grown. The film surface roughening process occurs first at the step when K diffuses into the crystalline Sb. The photocathode obtained from the multi-step growth exhibits roughness in an order of magnitude lower than the normal sequential process. X-ray diffraction measurements show that the material goes through two structural changes of the crystalline phase during formation, from crystalline Sb to K 3 Sb and finally to K 2 CsSb.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), High Energy Physics (HEP)

Grant/Contract Number:: AC02-06CH11357; AC02-05CH11231; AC02-98CH10886; KC0407-ALSJNT-I0013; SC0005713; DMR-1332208

OSTI ID:: 1374541

Alternate ID(s):: OSTI ID: 1379817

Journal Information:: Journal of Physics. D, Applied Physics, Vol. 50, Issue 20; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 13 works

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Free-Standing Bialkali Photocathodes Using Atomically Thin Substrates Yamaguchi, Hisato; Liu, Fangze; DeFazio, Jeffrey Advanced Materials Interfaces, Vol. 5, Issue 13 https://doi.org/10.1002/admi.201800249	journal	April 2018
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