skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

Abstract

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd 1-xMg xTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd 1-xMg xTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd 1-xMg xTe double heterostructures is discussed. Furthermore, the stability of CdTe/Cd 1-xMg xTe heterostructures are investigated with respect to thermal processing.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2];  [3];  [4];  [1]
  1. Texas State Univ., San Marcos, TX (United States)
  2. Colorado School of Mines, Golden, CO (United States)
  3. EAG Laboratories (Evans Analytical Group), Sunnyvale, CA (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1374127
Report Number(s):
NREL/JA-5K00-68890
Journal ID: ISSN 0361-5235
Grant/Contract Number:
AC36-08GO28308
Resource Type:
Journal Article: Accepted Manuscript
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 46; Journal Issue: 9; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; II-VI semiconductor materials; semiconductor epitaxial layers; Mg composition; band gap; elastic constants; diffusivity

Citation Formats

LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Noriega, O. C., Jayathilaka, P. A. R. D., Rab, S., Swartz, C. H., Diercks, D. R., Burton, G. L., Gorman, B. P., Wang, A., Barnes, T. M., and Myers, T. H. Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures. United States: N. p., 2017. Web. doi:10.1007/s11664-017-5589-3.
LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Noriega, O. C., Jayathilaka, P. A. R. D., Rab, S., Swartz, C. H., Diercks, D. R., Burton, G. L., Gorman, B. P., Wang, A., Barnes, T. M., & Myers, T. H. Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures. United States. doi:10.1007/s11664-017-5589-3.
LeBlanc, E. G., Edirisooriya, M., Ogedengbe, O. S., Noriega, O. C., Jayathilaka, P. A. R. D., Rab, S., Swartz, C. H., Diercks, D. R., Burton, G. L., Gorman, B. P., Wang, A., Barnes, T. M., and Myers, T. H. Mon . "Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures". United States. doi:10.1007/s11664-017-5589-3.
@article{osti_1374127,
title = {Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures},
author = {LeBlanc, E. G. and Edirisooriya, M. and Ogedengbe, O. S. and Noriega, O. C. and Jayathilaka, P. A. R. D. and Rab, S. and Swartz, C. H. and Diercks, D. R. and Burton, G. L. and Gorman, B. P. and Wang, A. and Barnes, T. M. and Myers, T. H.},
abstractNote = {The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd1-xMgxTe barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd1-xMgxTe layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd1-xMgxTe double heterostructures is discussed. Furthermore, the stability of CdTe/Cd1-xMgxTe heterostructures are investigated with respect to thermal processing.},
doi = {10.1007/s11664-017-5589-3},
journal = {Journal of Electronic Materials},
number = 9,
volume = 46,
place = {United States},
year = {Mon Jun 05 00:00:00 EDT 2017},
month = {Mon Jun 05 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
This content will become publicly available on June 5, 2018
Publisher's Version of Record

Save / Share:
  • CdTe/MnTe/CdMgTe quantum-well structures with one or two monolayers of MnTe inserted at CdTe/CdMgTe interfaces were fabricated. The spectra of the excitonic luminescence from CdTe quantum wells and their variation with temperature indicate that introduction of ultrathin MnTe layers improves the interface quality. The effect of a magnetic field in the Faraday configuration on the spectral position of the exciton-emission peaks indicates that frustration of magnetic moments in one-monolayer MnTe insertions is weaker than in two-monolayer insertions. The effect of a magnetic field on the exciton localization can be explained in terms of the exciton wave-function shrinkage and obstruction of themore » photoexcited charge-carrier motion in the quantum well.« less
  • We have shown that external hydrostatic pressure leads to the creation of structural defects, mainly in the vicinity of the II--VI/GaAs interface in the CdTe/Cd{sub 1-x}Mg{sub x}Te heterostructures grown by the molecular beam epitaxy method on GaAs substrates. These defects propagating across the epilayer cause permanent damage to the samples from the point of view of their electrical properties. In contrast, photoluminescence spectra are only weakly influenced by pressure. Our results shed light on the degradation process observed even without pressure in II--VI-based heterostructures.
  • CdSeTe/CdMgTe double heterostructures were produced with both n-type and unintentionally doped absorber layers. Measurements of the dependence of photoluminescence intensity on excitation intensity were carried out, as well as measurements of time-resolved photoluminescence decay after an excitation pulse. It was found that decay times under very low photon injection conditions are dominated by a non-radiative Shockley-Read-Hall process described using a recombination center with an asymmetric capture cross section, where the cross section for holes is larger than that for electrons. As a result of the asymmetry, the center effectively extends photoluminescence decay by a hole trapping phenomenon. A reduction inmore » electron capture cross section appeared at doping densities over 10 16cm -3. An analysis of the excitation intensity dependence of room temperature photoluminescence revealed a strong relationship with doping concentration. Here, this allows estimates of the carrier concentration to be made through a non-destructive optical method. Iodine was found to be an effective n-type dopant for CdTe, allowing controllable carrier concentrations without an increased rate of non-radiative recombination.« less
  • Cited by 3