Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

Chen, Renjie; Dayeh, Shadi A.

doi:10.1002/smll.201604117

Title: Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase Transformation

Journal Article · Thu Jun 08 00:00:00 EDT 2017 · Small

DOI:https://doi.org/10.1002/smll.201604117· OSTI ID:1374088

^[1]; Dayeh, Shadi A. ^[2]

Department of Electrical and Computer Engineering University of California San Diego La Jolla CA 92093 USA
Department of Electrical and Computer Engineering Materials Science and Engineering Program Department of NanoEngineering University of California San Diego La Jolla CA 92093 USA

The formation of low resistance and self‐aligned contacts with thermally stable alloyed phases is a prerequisite for realizing reliable functionality in ultrascaled semiconductor transistors. Detailed structural analysis of the phase transformation accompanying contact alloying can facilitate contact engineering as transistor channels approach a few atoms across. Original in situ heating transmission electron microscopy studies are carried out to record and analyze the atomic scale dynamics of contact alloy formation between Ni and In _0.53 Ga _0.47 As nanowire channels. It is observed that the nickelide reacts on the In _0.53 Ga _0.47 As (111) || Ni ₂ In _0.53 Ga _0.47 As (0001) interface with atomic ledge propagation along the Ni ₂ In _0.53 Ga _0.47 As direction. Ledges nucleate as a train of strained single‐bilayers and propagate in‐plane as double‐bilayers that are associated with a misfit dislocation of . The atomic structure is reconstructed to explain this phase transformation that involves collective gliding of three Shockley partials in In _0.53 Ga _0.47 As lattice to cancel out shear stress and the formation of misfit dislocations to compensate the large lattice mismatch in the newly formed nickelide phase and the In _0.53 Ga _0.47 As layers. This work demonstrates the applicability of interfacial disconnection (ledge + dislocation) theory in a nanowire channel during thermally induced phase transformation that is typical in metal/III–V semiconductor reactions.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC52‐06NA25396

OSTI ID:: 1374088

Journal Information:: Small, Journal Name: Small Vol. 13 Journal Issue: 30; ISSN 1613-6810

Publisher:: Wiley Blackwell (John Wiley & Sons)Copyright Statement

Country of Publication:: Germany

Language:: English

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Cited by: 5 works

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