skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Surface passivation for CdTe devices

Abstract

In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.

Inventors:
; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373708
Patent Number(s):
9,722,111
Application Number:
14/615,282
Assignee:
Alliance for Sustainable Energy, LLC NREL
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Feb 05
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., and Metzger, Wyatt K.. Surface passivation for CdTe devices. United States: N. p., 2017. Web.
Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., & Metzger, Wyatt K.. Surface passivation for CdTe devices. United States.
Reese, Matthew O., Perkins, Craig L., Burst, James M., Gessert, Timothy A., Barnes, Teresa M., and Metzger, Wyatt K.. Tue . "Surface passivation for CdTe devices". United States. doi:. https://www.osti.gov/servlets/purl/1373708.
@article{osti_1373708,
title = {Surface passivation for CdTe devices},
author = {Reese, Matthew O. and Perkins, Craig L. and Burst, James M. and Gessert, Timothy A. and Barnes, Teresa M. and Metzger, Wyatt K.},
abstractNote = {In one embodiment, a method for surface passivation for CdTe devices is provided. The method includes adjusting a stoichiometry of a surface of a CdTe material layer such that the surface becomes at least one of stoichiometric or Cd-rich; and reconstructing a crystalline lattice at the surface of the CdTe material layer by annealing the adjusted surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}

Patent:

Save / Share:

Works referenced in this record:

Dependence of the Minority-Carrier Lifetime on the Stoichiometry of CdTe Using Time-Resolved Photoluminescence and First-Principles Calculations
journal, August 2013


Photoemission studies of CdTe(100) and the Ag-CdTe(100) interface: Surface structure, growth behavior, Schottky barrier, and surface photovoltage
journal, November 1986


Polycrystalline CdTe thin films for photovoltaic applications
journal, December 2006

  • Bosio, Alessio; Romeo, Nicola; Mazzamuto, Samantha
  • Progress in Crystal Growth and Characterization of Materials, Vol. 52, Issue 4, p. 247-279
  • DOI: 10.1016/j.pcrysgrow.2006.09.001

Time-resolved photoluminescence studies of CdTe solar cells
journal, September 2003

  • Metzger, W. K.; Albin, D.; Levi, D.
  • Journal of Applied Physics, Vol. 94, Issue 5, p. 3549-3555
  • DOI: 10.1063/1.1597974

Luminescence effects of ion-beam bombardment of CdTe surfaces
journal, September 2009


Surface passivation by sulfur treatment of undoped p-CdTe(100)
journal, August 2000

  • Kang, C. K.; Yuldashev, Sh. U.; Leem, J. H.
  • Journal of Applied Physics, Vol. 88, Issue 4, p. 2013-2015
  • DOI: 10.1063/1.1305551