Highly doped layer for tunnel junctions in solar cells

Fetzer, Christopher M.

Title: Highly doped layer for tunnel junctions in solar cells

Patent · Tue Aug 01 00:00:00 EDT 2017

OSTI ID:1373704

Fetzer, Christopher M.

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

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Research Organization:: THE BOEING COMPANY, Chicago, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: FC36-07GO17052

Assignee:: THE BOEING COMPANY

Patent Number(s):: 9,722,131

Application Number:: 12/404,795

OSTI ID:: 1373704

Resource Relation:: Patent File Date: 2009 Mar 16

Country of Publication:: United States

Language:: English

References (8)

Heterojunction solar cell Olson, Jerry M. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/5342453 US Patent Document 5,342,453	patent	August 1994
Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material King, Richard R.; Joslin, David E.; Karam, Nasser H. https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6316715 US Patent Document 6,316,715	patent	November 2001
Group III-V solar cell Takamoto, Tatsuya https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/20030136442 US Patent Application 10/340711; 20030136442	patent-application	July 2003
Ultrathin delta doped GaAs and AlAs tunnel junctions as interdevice ohmic contacts DeSalvo, Gregory C. Journal of Applied Physics, Vol. 74, Issue 6, p. 4207-4212 https://doi.org/10.1063/1.354425	journal	September 1993
Growth and electrical characterization of Si delta‐doped GaInP by low pressure metalorganic chemical vapor deposition Wang, Chien‐Jen; Feng, Ming‐Shiann; Chan, Shih‐Hsiung Journal of Applied Physics, Vol. 79, Issue 10, p. 8054-8059 https://doi.org/10.1063/1.362359	journal	May 1996
AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application Jung, D.; Parker, C. A.; Ramdani, J. Journal of Applied Physics, Vol. 74, Issue 3, p. 2090-2093 https://doi.org/10.1063/1.354753	journal	August 1993
Application of δ-doping in GaAs tunnel junctions Wolter, J. H.; Leys, M. R.; Ragay, F. W. Electronics Letters, Vol. 30, Issue 1, p. 86-87 https://doi.org/10.1049/el:19940002	journal	January 1994
Multi-junction III–V solar cells: current status and future potential Yamaguchi, Masafumi; Takamoto, Tatsuya; Araki, Kenji Solar Energy, Vol. 79, Issue 1, p. 78-85 https://doi.org/10.1016/j.solener.2004.09.018	journal	July 2005

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