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Title: Highly doped layer for tunnel junctions in solar cells

Abstract

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Inventors:
Publication Date:
Research Org.:
THE BOEING COMPANY, Chicago, IL (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373704
Patent Number(s):
9,722,131
Application Number:
12/404,795
Assignee:
THE BOEING COMPANY GFO
DOE Contract Number:  
FC36-07GO17052
Resource Type:
Patent
Resource Relation:
Patent File Date: 2009 Mar 16
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE

Citation Formats

Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States: N. p., 2017. Web.
Fetzer, Christopher M. Highly doped layer for tunnel junctions in solar cells. United States.
Fetzer, Christopher M. Tue . "Highly doped layer for tunnel junctions in solar cells". United States. https://www.osti.gov/servlets/purl/1373704.
@article{osti_1373704,
title = {Highly doped layer for tunnel junctions in solar cells},
author = {Fetzer, Christopher M.},
abstractNote = {A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}

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Works referenced in this record:

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journal, September 1993

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