skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Abstract

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

Inventors:
; ;
Publication Date:
Research Org.:
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373572
Patent Number(s):
9,722,164
Application Number:
14/873,503
Assignee:
UNIVERSITY OF HOUSTON SYSTEM DOEEE
DOE Contract Number:
EE0005806
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jie, Qing, Ren, Zhifeng, and Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States: N. p., 2017. Web.
Jie, Qing, Ren, Zhifeng, & Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States.
Jie, Qing, Ren, Zhifeng, and Chen, Gang. 2017. "Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices". United States. doi:. https://www.osti.gov/servlets/purl/1373572.
@article{osti_1373572,
title = {Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices},
author = {Jie, Qing and Ren, Zhifeng and Chen, Gang},
abstractNote = {Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2017,
month = 8
}

Patent:

Save / Share:
  • Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-typemore » skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.« less
  • A thermoelectric material including a body centered cubic filled skutterudite having the formula A.sub.xFe.sub.yNi.sub.zSb.sub.12, where A is an alkaline earth element, x is no more than approximately 1.0, and the sum of y and z is approximately equal to 4.0. The alkaline earth element includes guest atoms selected from the group consisting of Be, Mb, Ca, Sr, Ba, Ra and combinations thereof. The filled skutterudite is shown to have properties suitable for a wide variety of thermoelectric applications.
  • Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermoelectric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated canmore » be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials.« less
  • After a brief review of the transport and thermoelectric properties of filled skutterudite antimonides, the authors present resonant ultrasound, specific heat, and inelastic neutron scattering results that establish the existence of two low-energy vibrational modes in the filled skutterudite LaFe{sub 3}CoSb{sub 12}. It is likely that at least one of these modes represents the localized, incoherent vibrations of the La ion in an oversized atomic {open_quotes}cage{close_quotes}. These results support the usefulness of weakly bound, {open_quotes}rattling{close_quotes} ions for the improvement of thermoelectric performance.