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Title: Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Abstract

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.

Inventors:
; ;
Publication Date:
Research Org.:
UNIVERSITY OF HOUSTON SYSTEM, Houston, TX (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1373572
Patent Number(s):
9,722,164
Application Number:
14/873,503
Assignee:
UNIVERSITY OF HOUSTON SYSTEM DOEEE
DOE Contract Number:  
EE0005806
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Oct 02
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Jie, Qing, Ren, Zhifeng, and Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States: N. p., 2017. Web.
Jie, Qing, Ren, Zhifeng, & Chen, Gang. Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices. United States.
Jie, Qing, Ren, Zhifeng, and Chen, Gang. Tue . "Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices". United States. doi:. https://www.osti.gov/servlets/purl/1373572.
@article{osti_1373572,
title = {Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices},
author = {Jie, Qing and Ren, Zhifeng and Chen, Gang},
abstractNote = {Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer "second layer" disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 .mu..OMEGA.cm.sup.2.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 01 00:00:00 EDT 2017},
month = {Tue Aug 01 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

Skutterudite Unicouple Characterization for Energy Harvesting Applications
journal, September 2012

  • Muto, Andrew; Yang, Jian; Poudel, Bed
  • Advanced Energy Materials, Vol. 3, Issue 2, p. 245-251
  • DOI: 10.1002/aenm.201200503