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Title: Hidden Interface Driven Exchange Coupling in Oxide Heterostructures

Abstract

A variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. However, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. Our results shed new light on using oxide interfaces to design functional spintronic devices.

Authors:
ORCiD logo [1];  [2];  [3];  [1];  [1];  [1];  [1];  [1];  [1];  [4];  [1];  [5]
  1. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos NM 87545 USA
  2. Materials Science Division, Argonne National Laboratory, Argonne IL 60439 USA; Department of Physics and Astronomy, West Virginia University, Morgantown WV 26506 USA
  3. Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge TN 37831 USA; Department of Physics and Astronomy, University of Tennessee, Knoxville TN 37996 USA
  4. Department of Materials Science, University of Cambridge, Cambridge CB3 OFS UK
  5. Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos NM 87545 USA; Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo NY 14260 USA
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Engineering and Physical Sciences Research Council (EPSRC); Oak Ridge National Laboratory (ORNL); USDOE Office of Science - Office of Basic Energy Sciences - Materials Sciences and Engineering Division
OSTI Identifier:
1373272
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Advanced Materials
Additional Journal Information:
Journal Volume: 29; Journal Issue: 26; Journal ID: ISSN 0935-9648
Publisher:
Wiley
Country of Publication:
United States
Language:
English
Subject:
epitaxial thin films; interface; magnetism; polarized neutron reflectometry

Citation Formats

Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, and Jia, Quanxi. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures. United States: N. p., 2017. Web. doi:10.1002/adma.201700672.
Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, & Jia, Quanxi. Hidden Interface Driven Exchange Coupling in Oxide Heterostructures. United States. doi:10.1002/adma.201700672.
Chen, Aiping, Wang, Qiang, Fitzsimmons, Michael R., Enriquez, Erik, Weigand, Marcus, Harrell, Zach, McFarland, Brian, Lü, Xujie, Dowden, Paul, MacManus-Driscoll, Judith L., Yarotski, Dmitry, and Jia, Quanxi. Tue . "Hidden Interface Driven Exchange Coupling in Oxide Heterostructures". United States. doi:10.1002/adma.201700672.
@article{osti_1373272,
title = {Hidden Interface Driven Exchange Coupling in Oxide Heterostructures},
author = {Chen, Aiping and Wang, Qiang and Fitzsimmons, Michael R. and Enriquez, Erik and Weigand, Marcus and Harrell, Zach and McFarland, Brian and Lü, Xujie and Dowden, Paul and MacManus-Driscoll, Judith L. and Yarotski, Dmitry and Jia, Quanxi},
abstractNote = {A variety of emergent phenomena have been enabled by interface engineering in complex oxides. The existence of an intrinsic interfacial layer has often been found at oxide heterointerfaces. However, the role of such an interlayerin controlling functionalities is not fully explored. Here, we report the control of the exchange bias (EB) in single-phase manganite thin films with nominallyuniform chemical composition across the interfaces. The sign of EB depends on the magnitude of the cooling field. A pinned layer, confirmed by polarized neutron reflectometry, provides the source of unidirectional anisotropy. The origin of the exchange bias coupling is discussed in terms of magnetic interactions between the interfacial ferromagnetically reduced layer and the bulk ferromagnetic region. The sign of EB is related to the frustration of antiferromagnetic coupling between the ferromagnetic region and the pinned layer. Our results shed new light on using oxide interfaces to design functional spintronic devices.},
doi = {10.1002/adma.201700672},
journal = {Advanced Materials},
issn = {0935-9648},
number = 26,
volume = 29,
place = {United States},
year = {2017},
month = {5}
}

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