skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Tantalum Oxide Resistive Memory Devices by IAD.

Abstract

Abstract not provided.

Authors:
; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1373154
Report Number(s):
SAND2016-7100C
646022
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the AVS 62nd International Symposium & Exhibition held October 18-23, 2015 in San Jose, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Goeke, Ronald S., Marinella, Matthew, Hughart, David Russell, and Decker, Seth. Tantalum Oxide Resistive Memory Devices by IAD.. United States: N. p., 2016. Web.
Goeke, Ronald S., Marinella, Matthew, Hughart, David Russell, & Decker, Seth. Tantalum Oxide Resistive Memory Devices by IAD.. United States.
Goeke, Ronald S., Marinella, Matthew, Hughart, David Russell, and Decker, Seth. Fri . "Tantalum Oxide Resistive Memory Devices by IAD.". United States. doi:. https://www.osti.gov/servlets/purl/1373154.
@article{osti_1373154,
title = {Tantalum Oxide Resistive Memory Devices by IAD.},
author = {Goeke, Ronald S. and Marinella, Matthew and Hughart, David Russell and Decker, Seth},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: