skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1373150
Report Number(s):
SAND2016-7092C
Journal ID: ISSN 0168-583X; 646017
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Journal Volume: 404; Conference: Proposed for presentation at the 15th International Conference on Nuclear Microprobe Technology and Applications held July 31 - August 5, 2016 in Lanzhou, China.
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., and Kaplar, Robert. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.. United States: N. p., 2016. Web. doi:10.1016/j.nimb.2016.11.031.
Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., & Kaplar, Robert. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.. United States. doi:10.1016/j.nimb.2016.11.031.
Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., and Kaplar, Robert. 2016. "Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.". United States. doi:10.1016/j.nimb.2016.11.031. https://www.osti.gov/servlets/purl/1373150.
@article{osti_1373150,
title = {Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.},
author = {Vizkelethy, Gyorgy and King, Michael Patrick and Atkas, O. and Kizilyalli, I.C. and Kaplar, Robert},
abstractNote = {Abstract not provided.},
doi = {10.1016/j.nimb.2016.11.031},
journal = {},
number = ,
volume = 404,
place = {United States},
year = 2016,
month = 7
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share:
  • Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
  • The effects of ion bombardment into MgO were investigated by measuring resulting volume changes with a cantilever beam technique and by monitoring the F band absorption induced in the UV region of the spectrum. Single crystals of MgO were bombarded along (100) with 500 keV argon which resulted in an expansion of the implanted near-surface layer due to the ion-induced lattice damage. Under subsequent 100 keV proton irradiation, however, a large fraction of this expansion is relieved since the material compacts. This seems to indicate that defects with different charge states are produced in MgO by heavy ion bombardment andmore » that electronic processes account for the volume changes observed during subsequent irradiation with the primarily ionizing radiation from the 100 keV H/sup +/ implantation. Identical behavior was found earlier for the highly ionic Al/sub 2/O/sub 3/ while no such effect was observed in the predominantly covalent SiO/sub 2/. The present results thus corroborate the existence of defects with different charge states in ionic materials. This behavior of MgO and Al/sub 2/O/sub 3/ is of considerable interest since both materials are candidates for first-wall application in CTR environments.« less
  • The radiation tolerance of two quantum devices, InP-based resonant tunneling diodes (RTD) and GaAs based two-dimensional electron gas transistors (2-DEGT), was investigated with ionizing and displacement damage radiation. The RTDs were subject to a maximum total gamma dose of 1 Mrad(InP), 55 MeV protons to a fluence of 3.5x10{sup 11} cm{sup {minus}2}, high energy neutrons to a fluence of 5x10{sup 10} cm{sup {minus}2} and heavy ions with a maximum LET (InP) of 23.6 MeV-cm{sup 2}/mg to a fluence of 1x10{sup 7} cm{sup {minus}2}. Using the peak-to-valley current ratios as the figure of merit, no radiation effects were detected on themore » RTDs measured under these circumstances. The 2-DEGTs were irradiated to a total gamma dose of 50 krad(GaAs) and 55 MeV protons to a fluence of 5x10{sup 10} cm{sup {minus}2}. Under gamma irradiation, a reduction in transconductance was observed, while the proton irradiated devices show an enhancement in the transconductance. The magnitude of these effects was proportional to gamma dose and proton fluence respectively. The effects are transient. For the gamma exposure, the tested 2-DEGTs almost completely recovered their pre-radiation performance. However, the proton-irradiated devices only recovered about half-way to their pre-irradiated characteristics. The transient times were on order of hours and may indicate annealing effects.« less
  • We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.