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Title: Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.

Abstract

Abstract not provided.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1373150
Report Number(s):
SAND2016-7092C
Journal ID: ISSN 0168-583X; 646017
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Journal Volume: 404; Conference: Proposed for presentation at the 15th International Conference on Nuclear Microprobe Technology and Applications held July 31 - August 5, 2016 in Lanzhou, China.
Country of Publication:
United States
Language:
English

Citation Formats

Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., and Kaplar, Robert. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.. United States: N. p., 2016. Web. doi:10.1016/j.nimb.2016.11.031.
Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., & Kaplar, Robert. Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.. United States. doi:10.1016/j.nimb.2016.11.031.
Vizkelethy, Gyorgy, King, Michael Patrick, Atkas, O., Kizilyalli, I.C., and Kaplar, Robert. Fri . "Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.". United States. doi:10.1016/j.nimb.2016.11.031. https://www.osti.gov/servlets/purl/1373150.
@article{osti_1373150,
title = {Nuclear microprobe investigation of the effects of ionization and displacement damage in vertical high voltage GaN diodes.},
author = {Vizkelethy, Gyorgy and King, Michael Patrick and Atkas, O. and Kizilyalli, I.C. and Kaplar, Robert},
abstractNote = {Abstract not provided.},
doi = {10.1016/j.nimb.2016.11.031},
journal = {},
number = ,
volume = 404,
place = {United States},
year = {Fri Jul 01 00:00:00 EDT 2016},
month = {Fri Jul 01 00:00:00 EDT 2016}
}

Conference:
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  • Radiation responses of high-voltage, vertical gallium-nitride (GaN) diodes were investigated using Sandia National Laboratories’ nuclear microprobe. Effects of the ionization and the displacement damage were studied using various ion beams. We found that the devices show avalanche effect for heavy ions operated under bias well below the breakdown voltage. Here, the displacement damage experiments showed a surprising effect for moderate damage: the charge collection efficiency demonstrated an increase instead of a decrease for higher bias voltages.
  • We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm 2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm 2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.
  • Abstract not provided.
  • The effects of dc chuck self-bias and high density source power (which predominantly control ion energy and ion flux, respectively) on the electrical properties of n-GaN Schottky diodes exposed to Inductively Coupled Plasma of Cl{sub 2}/Ar were examined. Both parameters were found to influence the diode performance, by reducing the reverse breakdown voltage and Schottky barrier height. All plasma conditions were found to produce a nitrogen-deficient surface, with a typical depth of the non-stoichiometry being {approximately}500 {angstrom}. Post-etch annealing was found to partially restore the diode characteristics.
  • The effects of ion bombardment into MgO were investigated by measuring resulting volume changes with a cantilever beam technique and by monitoring the F band absorption induced in the UV region of the spectrum. Single crystals of MgO were bombarded along (100) with 500 keV argon which resulted in an expansion of the implanted near-surface layer due to the ion-induced lattice damage. Under subsequent 100 keV proton irradiation, however, a large fraction of this expansion is relieved since the material compacts. This seems to indicate that defects with different charge states are produced in MgO by heavy ion bombardment andmore » that electronic processes account for the volume changes observed during subsequent irradiation with the primarily ionizing radiation from the 100 keV H/sup +/ implantation. Identical behavior was found earlier for the highly ionic Al/sub 2/O/sub 3/ while no such effect was observed in the predominantly covalent SiO/sub 2/. The present results thus corroborate the existence of defects with different charge states in ionic materials. This behavior of MgO and Al/sub 2/O/sub 3/ is of considerable interest since both materials are candidates for first-wall application in CTR environments.« less