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Title: Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1372938
Grant/Contract Number:  
FG02-07ER46351
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Name: Physical Review B Journal Volume: 96 Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Yang, Bowen, Lohmann, Mark, Barroso, David, Liao, Ingrid, Lin, Zhisheng, Liu, Yawen, Bartels, Ludwig, Watanabe, Kenji, Taniguchi, Takashi, and Shi, Jing. Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures. United States: N. p., 2017. Web. doi:10.1103/PhysRevB.96.041409.
Yang, Bowen, Lohmann, Mark, Barroso, David, Liao, Ingrid, Lin, Zhisheng, Liu, Yawen, Bartels, Ludwig, Watanabe, Kenji, Taniguchi, Takashi, & Shi, Jing. Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures. United States. doi:10.1103/PhysRevB.96.041409.
Yang, Bowen, Lohmann, Mark, Barroso, David, Liao, Ingrid, Lin, Zhisheng, Liu, Yawen, Bartels, Ludwig, Watanabe, Kenji, Taniguchi, Takashi, and Shi, Jing. Wed . "Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures". United States. doi:10.1103/PhysRevB.96.041409.
@article{osti_1372938,
title = {Strong electron-hole symmetric Rashba spin-orbit coupling in graphene/monolayer transition metal dichalcogenide heterostructures},
author = {Yang, Bowen and Lohmann, Mark and Barroso, David and Liao, Ingrid and Lin, Zhisheng and Liu, Yawen and Bartels, Ludwig and Watanabe, Kenji and Taniguchi, Takashi and Shi, Jing},
abstractNote = {},
doi = {10.1103/PhysRevB.96.041409},
journal = {Physical Review B},
number = 4,
volume = 96,
place = {United States},
year = {Wed Jul 26 00:00:00 EDT 2017},
month = {Wed Jul 26 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1103/PhysRevB.96.041409

Citation Metrics:
Cited by: 13 works
Citation information provided by
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Works referenced in this record:

Electric Field Effect in Atomically Thin Carbon Films
journal, October 2004


Single-layer MoS2 transistors
journal, January 2011

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