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Title: Dry etch method for texturing silicon and device

Abstract

A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.

Inventors:
; ; ;
Publication Date:
Research Org.:
International Business Machines Corporation, Armonk, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1372649
Patent Number(s):
9,716,195
Application Number:
14/747,954
Assignee:
International Business Machines Corporation DOEEE
DOE Contract Number:  
EE0006334
Resource Type:
Patent
Resource Relation:
Patent File Date: 2015 Jun 23
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, and Lee, Yun Seog. Dry etch method for texturing silicon and device. United States: N. p., 2017. Web.
Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, & Lee, Yun Seog. Dry etch method for texturing silicon and device. United States.
Gershon, Talia S., Haight, Richard A., Kim, Jeehwan, and Lee, Yun Seog. Tue . "Dry etch method for texturing silicon and device". United States. https://www.osti.gov/servlets/purl/1372649.
@article{osti_1372649,
title = {Dry etch method for texturing silicon and device},
author = {Gershon, Talia S. and Haight, Richard A. and Kim, Jeehwan and Lee, Yun Seog},
abstractNote = {A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked sulfur species. The silicon wafer is exposed to the cracked sulfur species for a time duration in accordance with a texture characteristic needed for a surface of the silicon wafer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 25 00:00:00 EDT 2017},
month = {Tue Jul 25 00:00:00 EDT 2017}
}

Patent:

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Works referenced in this record:

Plasma Etching Method
patent-application, February 2014


Hydrogen Sulfide as an Etchant for Silicon
journal, January 1969

  • Rai-Choudhury, P.; Noreika, A. J.
  • Journal of The Electrochemical Society, Vol. 116, Issue 4, p. 539-541
  • DOI: 10.1149/1.2411945

Anisotropic Reactive Ion Etching of Silicon Using SF6/O2/CHF3 Gas Mixtures
journal, January 1995

  • Legtenberg, Rob; Jansen, Henri; de Boer, Meint
  • Journal of The Electrochemical Society, Vol. 142, Issue 6, p. 2020-2028
  • DOI: 10.1149/1.2044234