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Title: Impact of laser anneal on NiPt silicide texture and chemical composition

Authors:
ORCiD logo [1];  [2];  [3]; ORCiD logo [4];  [4];  [4];  [4];  [4];  [5]
  1. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France, Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
  2. IBM, 850 rue Jean Monnet, 38926 Crolles Cedex, France
  3. IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, USA
  4. STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles Cedex, France
  5. Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble, France
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1372507
Grant/Contract Number:
AC02- 98CH10886
Resource Type:
Journal Article: Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 121; Journal Issue: 22; Related Information: CHORUS Timestamp: 2018-02-14 11:20:22; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States: N. p., 2017. Web. doi:10.1063/1.4985279.
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., & Salem, B. Impact of laser anneal on NiPt silicide texture and chemical composition. United States. doi:10.1063/1.4985279.
Feautrier, C., Ozcan, A. S., Lavoie, C., Valery, A., Beneyton, R., Borowiak, C., Clément, L., Pofelski, A., and Salem, B. Wed . "Impact of laser anneal on NiPt silicide texture and chemical composition". United States. doi:10.1063/1.4985279.
@article{osti_1372507,
title = {Impact of laser anneal on NiPt silicide texture and chemical composition},
author = {Feautrier, C. and Ozcan, A. S. and Lavoie, C. and Valery, A. and Beneyton, R. and Borowiak, C. and Clément, L. and Pofelski, A. and Salem, B.},
abstractNote = {},
doi = {10.1063/1.4985279},
journal = {Journal of Applied Physics},
number = 22,
volume = 121,
place = {United States},
year = {Wed Jun 14 00:00:00 EDT 2017},
month = {Wed Jun 14 00:00:00 EDT 2017}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record at 10.1063/1.4985279

Citation Metrics:
Cited by: 3works
Citation information provided by
Web of Science

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  • We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less
  • Using temperature controlled Si and C ion implantation, we studied the effects of pre-amorphization implantation on NiPt alloy silicide phase formation. In situ synchrotron x-ray diffraction and resistance measurements were used to monitor phase and morphology evolution in silicide films. Results show that substrate amorphization strongly modulate the nucleation of silicide phases, regardless of implant species. However, morphological stability of the thin films is mainly enhanced by C addition, independently of the amorphization depth.
  • We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.