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Title: Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1372196
Report Number(s):
SAND2016-6806C
645270
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the ARO/LPS Quantum Computing Program Review held July 18-21, 2016 in Alexandria, VA.
Country of Publication:
United States
Language:
English

Citation Formats

Luhman, Dwight, Lu, Tzu-Ming, Gamble, John King,, Muller, Richard P., Nielsen, Erik, Bethke, Donald Thomas, Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Dominguez, Jason James, Lilly, Michael, Carroll, Malcolm S., and Wanke, Michael. Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.. United States: N. p., 2016. Web.
Luhman, Dwight, Lu, Tzu-Ming, Gamble, John King,, Muller, Richard P., Nielsen, Erik, Bethke, Donald Thomas, Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Dominguez, Jason James, Lilly, Michael, Carroll, Malcolm S., & Wanke, Michael. Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.. United States.
Luhman, Dwight, Lu, Tzu-Ming, Gamble, John King,, Muller, Richard P., Nielsen, Erik, Bethke, Donald Thomas, Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Dominguez, Jason James, Lilly, Michael, Carroll, Malcolm S., and Wanke, Michael. 2016. "Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.". United States. doi:. https://www.osti.gov/servlets/purl/1372196.
@article{osti_1372196,
title = {Fabrication of Quantum Dots in Undoped SiGe with a single metal layer.},
author = {Luhman, Dwight and Lu, Tzu-Ming and Gamble, John King, and Muller, Richard P. and Nielsen, Erik and Bethke, Donald Thomas and Ten Eyck, Gregory A. and Pluym, Tammy and Wendt, Joel R. and Dominguez, Jason James and Lilly, Michael and Carroll, Malcolm S. and Wanke, Michael},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Conference:
Other availability
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  • Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less
  • Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si{sub 0.8}Ge{sub 0.2} heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratio usedmore » here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. The device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less
  • Abstract not provided.
  • Abstract not provided.
  • Abstract not provided.