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Title: Single-Shot Charge Readout Using a Cryogenic Heterojunction-Bipolar-Transistor Preamplifer Inline with a Silicon Single-Electron-Transistor at Millikelvin Temperatures.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1372179
Report Number(s):
SAND2016-6759C
645232
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 18th Annual Southwest Quantum Information and Technology (SQuInT) Workshop held February 18-20, 2016 in Albuquerque, NM.
Country of Publication:
United States
Language:
English

Citation Formats

Curry, Matthew Jon, England, Troy Daniel, Wendt, Joel R., Pluym, Tammy, Lilly, Michael, Carr, Stephen M, and Carroll, Malcolm S.. Single-Shot Charge Readout Using a Cryogenic Heterojunction-Bipolar-Transistor Preamplifer Inline with a Silicon Single-Electron-Transistor at Millikelvin Temperatures.. United States: N. p., 2016. Web.
Curry, Matthew Jon, England, Troy Daniel, Wendt, Joel R., Pluym, Tammy, Lilly, Michael, Carr, Stephen M, & Carroll, Malcolm S.. Single-Shot Charge Readout Using a Cryogenic Heterojunction-Bipolar-Transistor Preamplifer Inline with a Silicon Single-Electron-Transistor at Millikelvin Temperatures.. United States.
Curry, Matthew Jon, England, Troy Daniel, Wendt, Joel R., Pluym, Tammy, Lilly, Michael, Carr, Stephen M, and Carroll, Malcolm S.. 2016. "Single-Shot Charge Readout Using a Cryogenic Heterojunction-Bipolar-Transistor Preamplifer Inline with a Silicon Single-Electron-Transistor at Millikelvin Temperatures.". United States. doi:. https://www.osti.gov/servlets/purl/1372179.
@article{osti_1372179,
title = {Single-Shot Charge Readout Using a Cryogenic Heterojunction-Bipolar-Transistor Preamplifer Inline with a Silicon Single-Electron-Transistor at Millikelvin Temperatures.},
author = {Curry, Matthew Jon and England, Troy Daniel and Wendt, Joel R. and Pluym, Tammy and Lilly, Michael and Carr, Stephen M and Carroll, Malcolm S.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Conference:
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  • Abstract not provided.
  • We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. Furthermore, the transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to withoutmore » the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. We found that the circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less
  • We first examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. Morevoer, the transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared tomore » without the HBT amplification. The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less
  • We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-amplification of a single electron transistor (SET). The SET current modulates the base current of the HBT directly. The HBT-SET circuit is immersed in liquid helium, and its frequency response from low frequency to several MHz is measured. The current gain and the noise spectrum with the HBT result in a signal-to-noise-ratio (SNR) that is a factor of 10–100 larger than without the HBT at lower frequencies. The transition frequency defined by SNR = 1 has been extended by as much as a factor of 10 compared to without the HBT amplification.more » The power dissipated by the HBT cryogenic pre-amplifier is approximately 5 nW to 5 μW for the investigated range of operation. The circuit is also operated in a single electron charge read-out configuration in the time-domain as a proof-of-principle demonstration of the amplification approach for single spin read-out.« less
  • We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10 3 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies abovemore » 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.« less