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Title: Photon-induced selenium migration in TiSe 2

Abstract

TiSe 2 is a member of the transition metal dichalcogenide family of layered van der Waals materials which exhibits some distinct electronic and optical properties. Here, we perform Raman spectroscopy and microscopy studies on single crystal TiSe 2 to investigate thermal and photon-induced defects associated with diffusion of selenium to the surface. Additional phonon peaks near 250 cm -1 are observed in the laser- irradiated regions that are consistent with formation of amorphous and nanocrys- talline selenium on the surface. Temperature dependent studies of the threshold temperature and laser intensity necessary to initiate selenium migration to the surface show an activation barrier for the process of 1.55 eV. The impact of these results on the properties of strongly correlated electron states in TiSe 2 are discussed

Authors:
; ; ; ORCiD logo
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
National Science Foundation (NSF); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1372063
DOE Contract Number:  
AC02-06CH11357
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Raman spectroscopy; TiSe2; dichalcogenides; selenium vacancies

Citation Formats

Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., and Karapetrov, Goran. Photon-induced selenium migration in TiSe 2. United States: N. p., 2017. Web. doi:10.1063/1.4976745.
Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., & Karapetrov, Goran. Photon-induced selenium migration in TiSe 2. United States. doi:10.1063/1.4976745.
Lioi, David B., Gosztola, David J., Wiederrecht, Gary P., and Karapetrov, Goran. Mon . "Photon-induced selenium migration in TiSe 2". United States. doi:10.1063/1.4976745.
@article{osti_1372063,
title = {Photon-induced selenium migration in TiSe 2},
author = {Lioi, David B. and Gosztola, David J. and Wiederrecht, Gary P. and Karapetrov, Goran},
abstractNote = {TiSe2 is a member of the transition metal dichalcogenide family of layered van der Waals materials which exhibits some distinct electronic and optical properties. Here, we perform Raman spectroscopy and microscopy studies on single crystal TiSe2 to investigate thermal and photon-induced defects associated with diffusion of selenium to the surface. Additional phonon peaks near 250 cm-1 are observed in the laser- irradiated regions that are consistent with formation of amorphous and nanocrys- talline selenium on the surface. Temperature dependent studies of the threshold temperature and laser intensity necessary to initiate selenium migration to the surface show an activation barrier for the process of 1.55 eV. The impact of these results on the properties of strongly correlated electron states in TiSe2 are discussed},
doi = {10.1063/1.4976745},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 110,
place = {United States},
year = {2017},
month = {2}
}

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