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Title: Large-area, laterally-grown epitaxial semiconductor layers

Abstract

Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.

Inventors:
; ;
Publication Date:
Research Org.:
Yale Univ., New Haven, CT (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1371757
Patent Number(s):
9,711,352
Application Number:
14/776,634
Assignee:
Yale University DOESC
DOE Contract Number:  
SC0001134
Resource Type:
Patent
Resource Relation:
Patent File Date: 2014 Mar 14
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Han, Jung, Song, Jie, and Chen, Danti. Large-area, laterally-grown epitaxial semiconductor layers. United States: N. p., 2017. Web.
Han, Jung, Song, Jie, & Chen, Danti. Large-area, laterally-grown epitaxial semiconductor layers. United States.
Han, Jung, Song, Jie, and Chen, Danti. Tue . "Large-area, laterally-grown epitaxial semiconductor layers". United States. doi:. https://www.osti.gov/servlets/purl/1371757.
@article{osti_1371757,
title = {Large-area, laterally-grown epitaxial semiconductor layers},
author = {Han, Jung and Song, Jie and Chen, Danti},
abstractNote = {Structures and methods for confined lateral-guided growth of a large-area semiconductor layer on an insulating layer are described. The semiconductor layer may be formed by heteroepitaxial growth from a selective growth area in a vertically-confined, lateral-growth guiding structure. Lateral-growth guiding structures may be formed in arrays over a region of a substrate, so as to cover a majority of the substrate region with laterally-grown epitaxial semiconductor tiles. Quality regions of low-defect, stress-free GaN may be grown on silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 18 00:00:00 EDT 2017},
month = {Tue Jul 18 00:00:00 EDT 2017}
}

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Works referenced in this record:

Substrate for epitaxy
patent-application, December 2004


Efficiency droop in nitride-based light-emitting diodes
journal, July 2010