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Title: III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint

Abstract

Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4Tmore » efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.« less

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1371528
Report Number(s):
NREL/CP-5J00-67829
DOE Contract Number:
AC36-08GO28308
Resource Type:
Conference
Resource Relation:
Conference: Presented at 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC), 25-30 June 2017, Washington, DC
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; crystalline silicon; tandem cells; high-efficiency

Citation Formats

Schnabel, Manuel, Klein, Talysa R., Jain, Nikhil, Essig, Stephanie, Schulte-Huxel, Henning, Warren, Emily, van Hest, Maikel F. A. M., Geisz, John, Stradins, Paul, Tamboli, Adele, Rienacker, Michael, Merkle, Agnes, Schmidt, Jan, Brendel, Rolf, and Peibst, Robby. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint. United States: N. p., 2017. Web.
Schnabel, Manuel, Klein, Talysa R., Jain, Nikhil, Essig, Stephanie, Schulte-Huxel, Henning, Warren, Emily, van Hest, Maikel F. A. M., Geisz, John, Stradins, Paul, Tamboli, Adele, Rienacker, Michael, Merkle, Agnes, Schmidt, Jan, Brendel, Rolf, & Peibst, Robby. III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint. United States.
Schnabel, Manuel, Klein, Talysa R., Jain, Nikhil, Essig, Stephanie, Schulte-Huxel, Henning, Warren, Emily, van Hest, Maikel F. A. M., Geisz, John, Stradins, Paul, Tamboli, Adele, Rienacker, Michael, Merkle, Agnes, Schmidt, Jan, Brendel, Rolf, and Peibst, Robby. Tue . "III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint". United States. doi:. https://www.osti.gov/servlets/purl/1371528.
@article{osti_1371528,
title = {III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations: Preprint},
author = {Schnabel, Manuel and Klein, Talysa R. and Jain, Nikhil and Essig, Stephanie and Schulte-Huxel, Henning and Warren, Emily and van Hest, Maikel F. A. M. and Geisz, John and Stradins, Paul and Tamboli, Adele and Rienacker, Michael and Merkle, Agnes and Schmidt, Jan and Brendel, Rolf and Peibst, Robby},
abstractNote = {Solar cells made from bulk crystalline silicon (c-Si) dominate the market, but laboratory efficiencies have stagnated because the current record efficiency of 26.3% is already very close to the theoretical limit of 29.4% for a single-junction c-Si cell. In order to substantially boost the efficiency of Si solar cells we have been developing stacked III-V/Si tandem cells, recently attaining efficiencies above 32% in four-terminal configuration. In this contribution, we use state-of-the-art III-V cells coupled with equivalent circuit simulations to compare four-terminal (4T) to three- and two-terminal (3T, 2T) operation. Equivalent circuit simulations are used to show that tandem cells can be operated just as efficiently using three terminals as with four terminals. However, care must be taken not to overestimate 3T efficiency, as the two circuits used to extract current interact, and a method is described to accurately determine this efficiency. Experimentally, a 4T GaInP/Si tandem cell utilizing an interdigitated back contact cell is shown, exhibiting a 4T efficiency of 31.5% and a 2T efficiency of 28.1%. In 3T configuration, it is used to verify the finding from simulation that 3T efficiency is overestimated when interactions between the two circuits are neglected. Considering these, a 3T efficiency approaching the 4T efficiency is found, showing that 3T operation is efficient, and an outlook on fully integrated high-efficiency 3T and 2T tandem cells is given.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jul 11 00:00:00 EDT 2017},
month = {Tue Jul 11 00:00:00 EDT 2017}
}

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