Thermal-to-electrical energy conversion by diodes under negative illumination
Journal Article
·
· Physical Review B
- Stanford Univ., CA (United States)
Here, we consider an infrared photodiode under negative illumination, wherein the photodiode is maintained at a temperature T and radiatively exposed to an emissive body colder than itself. We experimentally demonstrate that a diode under such conditions can generate electrical power. Furthermore, we show theoretically that the efficiency of energy conversion can approach the Carnot limit. This work is applicable to waste heat recovery as well as emerging efforts to utilize the cold dark universe as a thermodynamic resource for renewable energy.
- Research Organization:
- Energy Frontier Research Centers (EFRC) (United States). Light-Material Interactions in Energy Conversion (LMI)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC0001293
- OSTI ID:
- 1371413
- Alternate ID(s):
- OSTI ID: 1249706
- Journal Information:
- Physical Review B, Vol. 93, Issue 16; Related Information: LMI partners with California Institute of Technology (lead); Harvard University; University of Illinois, Urbana-Champaign; Lawrence Berkeley National Laboratory; ISSN 2469-9950
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 57 works
Citation information provided by
Web of Science
Web of Science
Similar Records
Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions
Deep level defects in dilute GaAsBi alloys grown under intense UV illumination
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Journal Article
·
Fri Nov 15 00:00:00 EST 2019
· Optical and Quantum Electronics
·
OSTI ID:1371413
Deep level defects in dilute GaAsBi alloys grown under intense UV illumination
Journal Article
·
Thu Jul 21 00:00:00 EDT 2016
· Semiconductor Science and Technology
·
OSTI ID:1371413
+2 more
Simulation and Experimental Studies of Illumination Effects on the Current Transport of Nitridated GaAs Schottky Diode
Journal Article
·
Sat Dec 15 00:00:00 EST 2018
· Semiconductors (Woodbury, N.Y., Print)
·
OSTI ID:1371413
+7 more