Diffusion-Mediated Synthesis of MoS 2 /WS 2 Lateral Heterostructures

Bogaert, Kevin; Liu, Song; Chesin, Jordan; Titow, Denis; Gradečak, Silvija; Garaj, Slaven

doi:10.1021/acs.nanolett.6b02057

Title: Diffusion-Mediated Synthesis of MoS ₂ /WS ₂ Lateral Heterostructures

Journal Article · Wed Aug 10 00:00:00 EDT 2016 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.6b02057· OSTI ID:1371382

Bogaert, Kevin ^[1]; Liu, Song ^[1]; Chesin, Jordan ^[2]; Titow, Denis ^[3]; Gradečak, Silvija ^[2]; Garaj, Slaven ^[4]

National Univ. of Singapore. (Singapore). Center for Advanced 2D Materials and Graphene Research Center
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering; Justus-Liebig Univ., Giessen (Germany). Dept. of Biology and Chemistry
National Univ. of Singapore. (Singapore). Center for Advanced 2D Materials and Graphene Research Center; National Univ. of Singapore. (Singapore). Dept. of Physics; National Univ. of Singapore. (Singapore). Dept. of Biomedical Engineering

The controlled growth of two-dimensional transition metal dichalcogenide (TMD) lateral heterostructures would enable on-demand tuning of electronic and optoelectronic properties in this new class of materials. Prior to this work, compositional modulations in lateral TMD heterostructures have been considered to depend solely on the growth chronology. We show that in-plane diffusion can play a significant role in the chemical vapor deposition of MoS₂/WS₂ lateral heterostructures leading to a variety of nontrivial structures whose composition does not necessarily follow the growth order. Optical, structural, and compositional studies of TMD crystals captured at different growth temperatures and in different diffusion stages suggest that compositional mixing versus segregation are favored at high and low growth temperatures, respectively. The observed diffusion mechanism will expand the realm of possible lateral heterostructures, particularly ones that cannot be synthesized using traditional methods.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001088

OSTI ID:: 1371382

Journal Information:: Nano Letters, Vol. 16, Issue 8; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 116 works

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Title: Diffusion-Mediated Synthesis of MoS ₂ /WS ₂ Lateral Heterostructures