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Title: Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1-x)/2 V (1-x)/2 Ta x CoSb

Abstract

Recently, we found a new n-type thermoelectric half-Heusler NbCoSb with a valence electron count of 19, different from the usual 18. In this paper, we focus on the effect of partial substitution of Nb by isoelectronic elements V and Ta on the reduction of the thermal conductivity of Nb (1-x)/2 V (1-x)/2 Ta x CoSb. We found that the isoelectronic elements V and Ta for partial substitution of Nb can dramatically decrease the thermal conductivity from 7.0 W m-1 K-1 to 3.3 W m-1 K-1 at room temperature for Nb 0.44V 0.44Ta 0.12CoSb, but unfortunately a large power factor decrease also occurred. Consequently, a peak ZT of ~0.5 is achieved at 700 °C for Nb 0.44V 0.44Ta 0.12CoSb, which is about 25% higher than the ~0.4 reported earlier for NbCoSb.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1371022
DOE Contract Number:
SC0001299; FG02-09ER46577
Resource Type:
Journal Article
Resource Relation:
Journal Name: RSC Advances; Journal Volume: 5; Journal Issue: 124; Related Information: S3TEC partners with Massachusetts Institute of Technology (lead); Boston College; Oak Ridge National Laboratory; Rensselaer Polytechnic Institute
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; solar (photovoltaic); solar (thermal); solid state lighting; phonons; thermal conductivity; thermoelectric; defects; mechanical behavior; charge transport; spin dynamics; materials and chemistry by design; optics; synthesis (novel materials); synthesis (self-assembly); synthesis (scalable processing)

Citation Formats

Huang, Lihong, Wang, Yumei, Shuai, Jing, Zhang, Hao, Yang, Siqi, Zhang, Qinyong, and Ren, Zhifeng. Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1-x)/2 V (1-x)/2 Ta x CoSb. United States: N. p., 2015. Web. doi:10.1039/C5RA21404A.
Huang, Lihong, Wang, Yumei, Shuai, Jing, Zhang, Hao, Yang, Siqi, Zhang, Qinyong, & Ren, Zhifeng. Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1-x)/2 V (1-x)/2 Ta x CoSb. United States. doi:10.1039/C5RA21404A.
Huang, Lihong, Wang, Yumei, Shuai, Jing, Zhang, Hao, Yang, Siqi, Zhang, Qinyong, and Ren, Zhifeng. Thu . "Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1-x)/2 V (1-x)/2 Ta x CoSb". United States. doi:10.1039/C5RA21404A.
@article{osti_1371022,
title = {Thermal conductivity reduction by isoelectronic elements V and Ta for partial substitution of Nb in half-Heusler Nb (1-x)/2 V (1-x)/2 Ta x CoSb},
author = {Huang, Lihong and Wang, Yumei and Shuai, Jing and Zhang, Hao and Yang, Siqi and Zhang, Qinyong and Ren, Zhifeng},
abstractNote = {Recently, we found a new n-type thermoelectric half-Heusler NbCoSb with a valence electron count of 19, different from the usual 18. In this paper, we focus on the effect of partial substitution of Nb by isoelectronic elements V and Ta on the reduction of the thermal conductivity of Nb (1-x)/2 V (1-x)/2 Ta x CoSb. We found that the isoelectronic elements V and Ta for partial substitution of Nb can dramatically decrease the thermal conductivity from 7.0 W m-1 K-1 to 3.3 W m-1 K-1 at room temperature for Nb0.44V0.44Ta0.12CoSb, but unfortunately a large power factor decrease also occurred. Consequently, a peak ZT of ~0.5 is achieved at 700 °C for Nb0.44V0.44Ta0.12CoSb, which is about 25% higher than the ~0.4 reported earlier for NbCoSb.},
doi = {10.1039/C5RA21404A},
journal = {RSC Advances},
number = 124,
volume = 5,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}