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Title: High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity

Abstract

Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Excitonics (CE)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370895
DOE Contract Number:
SC0001088
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nano Letters; Journal Volume: 15; Journal Issue: 3; Related Information: CE partners with Massachusetts Institute of Technology (lead); Brookhaven National Laboratory; Harvard University
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE; boron nitride; electro-optic modulator; graphene; Optoelectronics; photonic crystal; solar (photovoltaic), solid state lighting, photosynthesis (natural and artificial), charge transport, optics, synthesis (novel materials), synthesis (self-assembly), synthesis (scalable processing)

Citation Formats

Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, and Englund, Dirk. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity. United States: N. p., 2015. Web. doi:10.1021/nl504860z.
Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, & Englund, Dirk. High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity. United States. doi:10.1021/nl504860z.
Gao, Yuanda, Shiue, Ren-Jye, Gan, Xuetao, Li, Luozhou, Peng, Cheng, Meric, Inanc, Wang, Lei, Szep, Attila, Walker, Dennis, Hone, James, and Englund, Dirk. Wed . "High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity". United States. doi:10.1021/nl504860z.
@article{osti_1370895,
title = {High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity},
author = {Gao, Yuanda and Shiue, Ren-Jye and Gan, Xuetao and Li, Luozhou and Peng, Cheng and Meric, Inanc and Wang, Lei and Szep, Attila and Walker, Dennis and Hone, James and Englund, Dirk},
abstractNote = {Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and interchip communications.1-4 Silicon-based EO modulators show sufficient figures of merits regarding device footprint, speed, power consumption, and modulation depth.5-11 However, the weak electro-optic effect of silicon still sets a technical bottleneck for these devices, motivating the development of modulators based on new materials. Graphene, a two-dimensional carbon allotrope, has emerged as an alternative active material for optoelectronic applications owing to its exceptional optical and electronic properties.12-14 Here, we demonstrate a high-speed graphene electro-optic modulator based on a graphene-boron nitride (BN) heterostructure integrated with a silicon photonic crystal nanocavity. Strongly enhanced light-matter interaction of graphene in a submicron cavity enables efficient electrical tuning of the cavity reflection. We observe a modulation depth of 3.2 dB and a cutoff frequency of 1.2 GHz.},
doi = {10.1021/nl504860z},
journal = {Nano Letters},
number = 3,
volume = 15,
place = {United States},
year = {Wed Mar 11 00:00:00 EDT 2015},
month = {Wed Mar 11 00:00:00 EDT 2015}
}