Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions

Tan, Gangjian; Chi, Hang; Liu, Wei; Zheng, Yun; Tang, Xinfeng; He, Jian; Uher, Ctirad

doi:10.1039/c5tc01739d

Title: Toward high thermoelectric performance p-type FeSb _2.2 Te _0.8 via in situ formation of InSb nanoinclusions

Journal Article · Thu Jan 01 00:00:00 EST 2015 · Journal of Materials Chemistry C

DOI:https://doi.org/10.1039/c5tc01739d· OSTI ID:1370115

Tan, Gangjian ^[1];

^[2]; Liu, Wei ^[2]; Zheng, Yun ^[1]; Tang, Xinfeng ^[1]; He, Jian ^[3]; Uher, Ctirad ^[2]

State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; Wuhan 430070, China
Department of Physics; University of Michigan; Ann Arbor; , USA
Department of Physics and Astronomy; Clemson University; Clemson; , USA

The InSb nanoinclusions formedin situat the grain boundaries of FeSb_2.2Te_0.8mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

DOE Contract Number:: SC0000957

OSTI ID:: 1370115

Journal Information:: Journal of Materials Chemistry C, Vol. 3, Issue 32; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 2050-7526

Publisher:: Royal Society of Chemistry

Country of Publication:: United States

Language:: English

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Title: Toward high thermoelectric performance p-type FeSb _2.2 Te _0.8 via in situ formation of InSb nanoinclusions