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Title: Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions

Abstract

The InSb nanoinclusions formedin situat the grain boundaries of FeSb 2.2Te 0.8mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.

Authors:
 [1]; ORCiD logo [2];  [2];  [1];  [1];  [3];  [2]
  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing; Wuhan University of Technology; Wuhan 430070, China
  2. Department of Physics; University of Michigan; Ann Arbor; , USA
  3. Department of Physics and Astronomy; Clemson University; Clemson; , USA
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370115
DOE Contract Number:
SC0000957
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Materials Chemistry. C; Journal Volume: 3; Journal Issue: 32; Related Information: CSTEC partners with University of Michigan (lead); Kent State University
Country of Publication:
United States
Language:
English

Citation Formats

Tan, Gangjian, Chi, Hang, Liu, Wei, Zheng, Yun, Tang, Xinfeng, He, Jian, and Uher, Ctirad. Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions. United States: N. p., 2015. Web. doi:10.1039/c5tc01739d.
Tan, Gangjian, Chi, Hang, Liu, Wei, Zheng, Yun, Tang, Xinfeng, He, Jian, & Uher, Ctirad. Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions. United States. doi:10.1039/c5tc01739d.
Tan, Gangjian, Chi, Hang, Liu, Wei, Zheng, Yun, Tang, Xinfeng, He, Jian, and Uher, Ctirad. Thu . "Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions". United States. doi:10.1039/c5tc01739d.
@article{osti_1370115,
title = {Toward high thermoelectric performance p-type FeSb 2.2 Te 0.8 via in situ formation of InSb nanoinclusions},
author = {Tan, Gangjian and Chi, Hang and Liu, Wei and Zheng, Yun and Tang, Xinfeng and He, Jian and Uher, Ctirad},
abstractNote = {The InSb nanoinclusions formedin situat the grain boundaries of FeSb2.2Te0.8mitigates the mobility degradation while the added grain boundaries effectively scatter heat-carrying phonons. This novel “electron-channel phonon-barrier” nanocompositing approach opens a new route to design high performance thermoelectric materials.},
doi = {10.1039/c5tc01739d},
journal = {Journal of Materials Chemistry. C},
number = 32,
volume = 3,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}