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Title: Formation and coarsening of near-surface Ga nanoparticles on SiN x

Authors:
; ; ; ORCiD logo
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1370079
DOE Contract Number:  
SC0000957
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 24; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

Citation Formats

Canniff, J. C., Jeon, S., Huang, S., and Goldman, R. S. Formation and coarsening of near-surface Ga nanoparticles on SiN x. United States: N. p., 2015. Web. doi:10.1063/1.4922454.
Canniff, J. C., Jeon, S., Huang, S., & Goldman, R. S. Formation and coarsening of near-surface Ga nanoparticles on SiN x. United States. doi:10.1063/1.4922454.
Canniff, J. C., Jeon, S., Huang, S., and Goldman, R. S. Mon . "Formation and coarsening of near-surface Ga nanoparticles on SiN x". United States. doi:10.1063/1.4922454.
@article{osti_1370079,
title = {Formation and coarsening of near-surface Ga nanoparticles on SiN x},
author = {Canniff, J. C. and Jeon, S. and Huang, S. and Goldman, R. S.},
abstractNote = {},
doi = {10.1063/1.4922454},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 24,
volume = 106,
place = {United States},
year = {2015},
month = {6}
}

Works referenced in this record:

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Control of Thickness and Orientation of Solution-Grown Silicon Nanowires
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Controlled Growth and Structures of Molecular-Scale Silicon Nanowires
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