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Title: Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications

Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: ACS Photonics; Journal Volume: 2; Journal Issue: 2; Related Information: CSTEC partners with University of Michigan (lead); Kent State University
Country of Publication:
United States

Citation Formats

Shi, Guangsha, and Kioupakis, Emmanouil. Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications. United States: N. p., 2015. Web. doi:10.1021/ph5002999.
Shi, Guangsha, & Kioupakis, Emmanouil. Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications. United States. doi:10.1021/ph5002999.
Shi, Guangsha, and Kioupakis, Emmanouil. 2015. "Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications". United States. doi:10.1021/ph5002999.
title = {Electronic and Optical Properties of Nanoporous Silicon for Solar-Cell Applications},
author = {Shi, Guangsha and Kioupakis, Emmanouil},
abstractNote = {},
doi = {10.1021/ph5002999},
journal = {ACS Photonics},
number = 2,
volume = 2,
place = {United States},
year = 2015,
month = 2
  • Surface nanostructuration is an important challenge for the optimization of light trapping in solar cell. We present simulations on both the optical properties and the efficiency of micro pillars—MPs—or nanocones—NCs—silicon based solar cells together with measurements on their associated optical absorption. We address the simulation using the Finite Difference Time Domain method, well-adapted to deal with a periodic set of nanostructures. We study the effect of the period, the bottom diameter, the top diameter, and the height of the MPs or NCs on the efficiency, assuming that one absorbed photon induces one exciton. This allows us to give a kindmore » of abacus involving all the geometrical parameters of the nanostructured surface with regard to the efficiency of the associated solar cell. We also show that for a given ratio of the diameter over the period, the best efficiency is obtained for small diameters. For small lengths, MPs are extended to NCs by changing the angle between the bottom surface and the vertical face of the MPs. The best efficiency is obtained for an angle of the order of 70°. Finally, nanostructures have been processed and allow comparing experimental results with simulations. In every case, a good agreement is found.« less
  • The initial growth stage of phosphorus doped microcrystalline silicon films prepared by plasma enhanced chemical vapor deposition with different plasma excitation frequencies in the range 13.56{endash}116 MHz was studied by Raman and infrared spectroscopy, optical transmission and reflection, and conductivity measurements. The sensitivity of Raman spectroscopy and optical reflection on Si crystallites in the initial growth regime is compared and optical reflection at 4.5 eV is proposed as an easy and reliable tool for this investigation. While the crystallite formation on amorphous silicon substrates at 13.56 MHz is delayed in comparison with glass, SiO{sub 2} and chromium substrates, nucleation ofmore » the crystalline phase on amorphous silicon is found to be greatly enhanced at higher plasma excitation frequencies. On the other hand, for deposition on glass, SiO{sub 2}, and chromium at frequencies equal to or higher than 70 MHz, increased porosity is found in the initial growth region. The results are interpreted within a model that suggests a conelike initial formation of the silicon crystallites and a higher etching rate of disordered material at high plasma excitation frequencies. In addition, the extension of the process of crystallite formation from the film-plasma interface into a growth zone more than 10 nm deep is proposed. The application of the microcrystalline silicon layers prepared at high plasma excitation frequency is demonstrated in amorphous silicon based tandem solar cells. {copyright} {ital 1997 American Institute of Physics.}« less
  • We report energy bands, density of states and optical properties of CuGaS{sub 2} and CuInS{sub 2} chalcopyrites. The electronic structure has been computed using linear combination of atomic orbitals (LCAO) scheme within density functional theory (DFT) and full-potential linearised augmented plane wave method. The energy bands, density of states, components of dielectric tensors and absorption coefficients are compared with the available data. It is seen that the present LCAO-DFT calculations reproduce the electronic properties of both the chalcopyrites in a reasonable way. The optical properties show more absorption of solar radiations for CuGaS{sub 2} chalcopyrite, depicting its more usefulness inmore » the solar cells. (author)« less