Strain sensitivity of band gaps of Sn-containing semiconductors
- Authors:
- Publication Date:
- Research Org.:
- Energy Frontier Research Centers (EFRC) (United States). Center on Nanostructuring for Efficient Energy Conversion (CNEEC)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
- OSTI Identifier:
- 1370028
- DOE Contract Number:
- SC0001060
- Resource Type:
- Journal Article
- Resource Relation:
- Journal Name: Physical Review. B, Condensed Matter and Materials Physics; Journal Volume: 91; Journal Issue: 4; Related Information: CNEEC partners with Stanford University (lead); Carnegie Institution at Stanford; Technical University of Denmark
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., and Jacobsen, Karsten W. Strain sensitivity of band gaps of Sn-containing semiconductors. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.045204.
Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., & Jacobsen, Karsten W. Strain sensitivity of band gaps of Sn-containing semiconductors. United States. doi:10.1103/PhysRevB.91.045204.
Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., and Jacobsen, Karsten W. Thu .
"Strain sensitivity of band gaps of Sn-containing semiconductors". United States.
doi:10.1103/PhysRevB.91.045204.
@article{osti_1370028,
title = {Strain sensitivity of band gaps of Sn-containing semiconductors},
author = {Li, Hong and Castelli, Ivano E. and Thygesen, Kristian S. and Jacobsen, Karsten W.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.045204},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 4,
volume = 91,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 2015},
month = {Thu Jan 01 00:00:00 EST 2015}
}
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