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Title: Twin superlattice-induced large surface recombination velocity in GaAs nanostructures

Authors:
; ORCiD logo; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1369913
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 23; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

Citation Formats

Sheng, Chunyang, Brown, Evan, Shimojo, Fuyuki, and Nakano, Aiichiro. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures. United States: N. p., 2014. Web. doi:10.1063/1.4903487.
Sheng, Chunyang, Brown, Evan, Shimojo, Fuyuki, & Nakano, Aiichiro. Twin superlattice-induced large surface recombination velocity in GaAs nanostructures. United States. doi:10.1063/1.4903487.
Sheng, Chunyang, Brown, Evan, Shimojo, Fuyuki, and Nakano, Aiichiro. Mon . "Twin superlattice-induced large surface recombination velocity in GaAs nanostructures". United States. doi:10.1063/1.4903487.
@article{osti_1369913,
title = {Twin superlattice-induced large surface recombination velocity in GaAs nanostructures},
author = {Sheng, Chunyang and Brown, Evan and Shimojo, Fuyuki and Nakano, Aiichiro},
abstractNote = {},
doi = {10.1063/1.4903487},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 105,
place = {United States},
year = {2014},
month = {12}
}

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