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Title: Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

Authors:
ORCiD logo; ; ; ;
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Energy Nanoscience (CEN)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1369876
DOE Contract Number:  
SC0001013
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 117; Journal Issue: 5; Related Information: CEN partners with University of Southern California (lead); University of Illinois, Urbana-Champaign; University of Michigan; University of Virginia; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English

Citation Formats

Brown, Evan, Sheng, Chunyang, Shimamura, Kohei, Shimojo, Fuyuki, and Nakano, Aiichiro. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures. United States: N. p., 2015. Web. doi:10.1063/1.4907534.
Brown, Evan, Sheng, Chunyang, Shimamura, Kohei, Shimojo, Fuyuki, & Nakano, Aiichiro. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures. United States. doi:10.1063/1.4907534.
Brown, Evan, Sheng, Chunyang, Shimamura, Kohei, Shimojo, Fuyuki, and Nakano, Aiichiro. Sat . "Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures". United States. doi:10.1063/1.4907534.
@article{osti_1369876,
title = {Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures},
author = {Brown, Evan and Sheng, Chunyang and Shimamura, Kohei and Shimojo, Fuyuki and Nakano, Aiichiro},
abstractNote = {},
doi = {10.1063/1.4907534},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 117,
place = {United States},
year = {2015},
month = {2}
}

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