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Title: Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.

Abstract

Abstract not provided.

Authors:
; ; ; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1369519
Report Number(s):
SAND2016-6423C
643970
DOE Contract Number:
AC04-94AL85000
Resource Type:
Conference
Resource Relation:
Conference: Proposed for presentation at the 18th International Conference on Metal Organic Vapor Phase Epitaxy held July 10-15, 2016 in San Diego, CA.
Country of Publication:
United States
Language:
English

Citation Formats

Leung, Benjamin, Tsai, Miao-Chan, Balakrishnan, Ganesh, Li, Changyi, Brueck, Steven R. J., Figiel, Jeffrey J., Lu, Ping, and Wang, George T.. Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.. United States: N. p., 2016. Web.
Leung, Benjamin, Tsai, Miao-Chan, Balakrishnan, Ganesh, Li, Changyi, Brueck, Steven R. J., Figiel, Jeffrey J., Lu, Ping, & Wang, George T.. Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.. United States.
Leung, Benjamin, Tsai, Miao-Chan, Balakrishnan, Ganesh, Li, Changyi, Brueck, Steven R. J., Figiel, Jeffrey J., Lu, Ping, and Wang, George T.. 2016. "Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.". United States. doi:. https://www.osti.gov/servlets/purl/1369519.
@article{osti_1369519,
title = {Highly Anisotropic Crystallographic Etching for Fabrication of High-Aspect Ratio GaN Nanostructures.},
author = {Leung, Benjamin and Tsai, Miao-Chan and Balakrishnan, Ganesh and Li, Changyi and Brueck, Steven R. J. and Figiel, Jeffrey J. and Lu, Ping and Wang, George T.},
abstractNote = {Abstract not provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = 2016,
month = 7
}

Conference:
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  • At present, the fabrication of patterns with deep submicron and nanometer dimensions has attracted strong attention for the study of nanoscale devices. A method for fabrication of fine patterns by conventional technologies such as optical lithography, trilayer resist, magnetron reactive ion etching (MRIE), and plasma enhanced chemical vapor deposition (PECVD) is described. Using the sidewall process for fine pattern transfer and magnetron reactive ion etching, deep submicron and nanometer patterns with high aspect ratio have been prepared. 3 refs., 6 figs.
  • Metal assisted chemical etching (MacEtch) is a recently developed anisotropic wet etching method that is capable of producing high aspect ratio semiconductor nanostructures from patterned metal film. In this review article, we highlight the characteristics of MacEtch of silicon (Si) including controllability of the produced sidewall roughness, the inherent high aspect ratio, the weak crystal orientation dependence, impurity doping and solution concentration dependent porosity, as well as the applicability of MacEtch to non-Si based semiconductor materials including III-V compound semiconductors. Also reviewed are applications of MacEtch produced high aspect ratio Si nanostructures in photovoltaics, where the p-n junction can bemore » in the planar Si tray, core-shell, or axial geometry, with nanowire, micropillar, or hole arrays serving as light trapping or carrier collection structures. The prospect of using MacEtch to improve the cost and efficiency of photovoltaic cells is discussed. (c) 2011 Elsevier Ltd. All rights reserved.« less
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  • We report on the formation of ultra-high aspect ratio nanopores in silicon bulk material using photo-assisted electrochemical etching. Here, n-type silicon is used as anode in contact with hydrofluoric acid. Based on the local dissolution of surface atoms in pre-defined etching pits, pore growth and pore diameter are, respectively, driven and controlled by the supply of minority charge carriers generated by backside illumination. Thus, arrays with sub-100 nm wide pores were fabricated. Similar to macropore etching, it was found that the pore diameter is proportional to the etching current, i.e., smaller etching currents result in smaller pore diameters. To find themore » limits under which nanopores with controllable diameter still can be obtained, etching was performed at very low current densities (several μA cm{sup −2}). By local etching, straight nanopores with aspect ratios above 1000 (∼19 μm deep and ∼15 nm pore tip diameter) were achieved. However, inherent to the formation of such narrow pores is a radius of curvature of a few nanometers at the pore tip, which favors electrical breakdown resulting in rough pore wall morphologies. Lowering the applied bias is adequate to reduce spiking pores but in most cases also causes etch stop. Our findings on bulk silicon provide a realistic chance towards sub-10 nm pore arrays on silicon membranes, which are of great interest for molecular filtering and possibly DNA sequencing.« less
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