Fabrication of deep submicron patterns with high aspect ratio using magnetron reactive ion etching and sidewall process
At present, the fabrication of patterns with deep submicron and nanometer dimensions has attracted strong attention for the study of nanoscale devices. A method for fabrication of fine patterns by conventional technologies such as optical lithography, trilayer resist, magnetron reactive ion etching (MRIE), and plasma enhanced chemical vapor deposition (PECVD) is described. Using the sidewall process for fine pattern transfer and magnetron reactive ion etching, deep submicron and nanometer patterns with high aspect ratio have been prepared. 3 refs., 6 figs.