Submicrometer Epsilon-Near-Zero Electroabsorption Modulators Enabled by High-Mobility Cadmium Oxide
Here, epsilon-near-zero materials provide a new path for tailoring light-matter interactions at the nanoscale. In this paper, we analyze a compact electroabsorption modulator based on epsilon-near-zero confinement in transparent conducting oxide films. The non-resonant modulator operates through field-effect carrier density tuning. We compare the performance of modulators composed of two different conducting oxides, namely indium oxide (In2O3) and cadmium oxide (CdO), and show that better modulation performance is achieved when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. In particular, we show that non-resonant electroabsorption modulators with sub-micron lengths and greater than 5 dB extinction ratios may be achieved through the proper selection of high-mobility transparent conducting oxides, opening a path for device miniaturization and increased modulation depth.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0003525; AC04-94AL85000
- OSTI ID:
- 1371811
- Alternate ID(s):
- OSTI ID: 1369305; OSTI ID: 1371812
- Report Number(s):
- SAND-2017-6855J; 7970105
- Journal Information:
- IEEE Photonics Journal (Online), Journal Name: IEEE Photonics Journal (Online) Vol. 9 Journal Issue: 4; ISSN 1943-0655
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- France
- Language:
- English
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